Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

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	Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates
	Ye XL; Xu B
刊名	physica e
	2000
卷号	8 期号:2 页码:164-169
关键词	self-assembled quantum dots InP substrate high index In(Ga MBE MOLECULAR-BEAM-EPITAXY VAPOR-PHASE EPITAXY GAAS ISLANDS PHOTOLUMINESCENCE INP(001) GROWTH LASERS Al)As/InAlAs/InP
ISSN号	1386-9477
通讯作者	sun zz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	in this paper, we investigated the self-assembled quantum dots formed on (100) and (n11)b (n = 2, 3, 4, 5) inp substrates by molecular beam epitaxy (mbe). two kinds of ternary qds (in0.9ga0.1as and in0.9al0.1as qds) are grown on the above substrates; transmission electron microscopy (tem) and photoluminescence (pl) results confirm qds formation for all samples. the pl spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. highest pl integral intensity is observed from qds on (411)b surfaces, which shows a potential for improving the optical properties of qds by using high-index surface. (c) 2000 elsevier science b.v. all rights reserved.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12492]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates[J]. physica e,2000,8(2):164-169.
APA	Ye XL,&Xu B.(2000).Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates.physica e,8(2),164-169.
MLA	Ye XL,et al."Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates".physica e 8.2(2000):164-169.