Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate
Ye XL; Xu B
刊名journal of applied physics
2000
卷号88期号:1页码:533-536
关键词MOLECULAR-BEAM EPITAXY INAS ISLANDS INP(001) GROWTH GAAS SEMICONDUCTORS THICKNESS LASERS INGAAS SIZE
ISSN号0021-8979
通讯作者sun s,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要self-assembled in0.9ga0.1as, in0.9al0.1as, and inas quantum dots (qd) were fabricated in an inalas matrix lattice-matched to an inp substrate by molecular beam epitaxy. preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. experimental results reveal clear differences in qd formation, size distribution, and luminescence between the inas and in-0.9(ga/al)(0.1)as samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of qds on an inp substrate. (c) 2000 american institute of physics. [s0021-8979(00)10213-0].
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/12540]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Ye XL,Xu B. Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate[J]. journal of applied physics,2000,88(1):533-536.
APA Ye XL,&Xu B.(2000).Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate.journal of applied physics,88(1),533-536.
MLA Ye XL,et al."Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate".journal of applied physics 88.1(2000):533-536.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace