Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate | |
Ye XL; Xu B | |
刊名 | journal of applied physics |
2000 | |
卷号 | 88期号:1页码:533-536 |
关键词 | MOLECULAR-BEAM EPITAXY INAS ISLANDS INP(001) GROWTH GAAS SEMICONDUCTORS THICKNESS LASERS INGAAS SIZE |
ISSN号 | 0021-8979 |
通讯作者 | sun s,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
中文摘要 | self-assembled in0.9ga0.1as, in0.9al0.1as, and inas quantum dots (qd) were fabricated in an inalas matrix lattice-matched to an inp substrate by molecular beam epitaxy. preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. experimental results reveal clear differences in qd formation, size distribution, and luminescence between the inas and in-0.9(ga/al)(0.1)as samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of qds on an inp substrate. (c) 2000 american institute of physics. [s0021-8979(00)10213-0]. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/12540] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Ye XL,Xu B. Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate[J]. journal of applied physics,2000,88(1):533-536. |
APA | Ye XL,&Xu B.(2000).Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate.journal of applied physics,88(1),533-536. |
MLA | Ye XL,et al."Structural and photoluminescence properties of In-0.9(Ga/Al)(0.1)As self-assembled quantum dots on InP substrate".journal of applied physics 88.1(2000):533-536. |
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