×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [26]
内容类型
期刊论文 [26]
发表日期
2011 [6]
2010 [5]
2009 [1]
2008 [2]
2006 [1]
2002 [1]
更多...
学科主题
半导体物理 [26]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共26条,第1-10条
帮助
限定条件
学科主题:半导体物理
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy
期刊论文
physica status solidi(c) current topics in solid state physics, 2011, 卷号: 8, 期号: 2, 页码: 393-395
Wang, S.L.
;
Meng, K.K.
;
Chen, L.
;
Xu, P.F.
;
Meng, H.J.
;
Lu, J.
;
Zhao, J.H.
收藏
  |  
浏览/下载:68/0
  |  
提交时间:2012/06/14
Drop formation
Epitaxial growth
Ferromagnetic materials
Ferromagnetism
Gallium alloys
High resolution transmission electron microscopy
Magnetic semiconductors
Manganese
Semiconducting silicon
Semiconductor growth
Semiconductor quantum dots
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
收藏
  |  
浏览/下载:73/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 100301
Wang, LG
;
Shen, C
;
Zheng, HZ
;
Zhu, H
;
Zhao, JH
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/01/06
charged acceptor centre
screening effect
exchange interaction
SHALLOW ACCEPTOR STATES
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
收藏
  |  
浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93507
作者:
Wang LG
;
Chen L
;
Zhu H
收藏
  |  
浏览/下载:43/5
  |  
提交时间:2011/07/05
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks
期刊论文
physics letters a, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796
Ning JQ (Ning J. Q.)
;
Xu SJ (Xu S. J.)
;
Wei ZF (Wei Z. F.)
;
Ruan XZ (Ruan X. Z.)
;
Ji Y (Ji Yang)
;
Zheng HZ (Zheng H. Z.)
;
Liu HC (Liu H. C.)
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/12/05
Optical Kerr effect
Electron spin
Quantum disks
InAs/GaAs
REFRACTIVE-INDEX
COHERENCE
GAAS
SEMICONDUCTORS
Electron spin dynamics in heavily Mn-doped (Ga,Mn)As
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262109
作者:
Chen L
;
Zhang XH
收藏
  |  
浏览/下载:63/6
  |  
提交时间:2011/07/05
SEMICONDUCTORS
TEMPERATURE
GAAS
Band-tail shape and transport near the metal-insulator transition in Si-doped
期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202
Misuraca J (Misuraca Jennifer)
;
Trbovic J (Trbovic Jelena)
;
Lu J (Lu Jun)
;
Zhao JH (Zhao Jianhua)
;
Ohno Y (Ohno Yuzo)
;
Ohno H (Ohno Hideo)
;
Xiong P (Xiong Peng)
;
von Molnar S (von Molnar Stephan)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/10/11
PERSISTENT PHOTOCONDUCTIVITY
DX CENTERS
ALXGA1-XAS
GAAS
SEMICONDUCTORS
Origin of ferromagnetism in self-assembled Ga1-xMnxAs quantum dots grown on Si
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 24, 页码: article no.242505
作者:
Chen L
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2011/07/05
MN
SEMICONDUCTORS
SPINTRONICS
ELECTRONICS
(GA,MN)AS
GAAS
©版权所有 ©2017 CSpace - Powered by
CSpace