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科研机构
半导体研究所 [18]
内容类型
期刊论文 [18]
发表日期
2009 [1]
2008 [2]
2007 [1]
2006 [3]
2003 [2]
2002 [2]
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半导体物理 [18]
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学科主题:半导体物理
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Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 041001
作者:
Hao GD
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浏览/下载:131/28
  |  
提交时间:2010/03/08
CONTINUOUS-WAVE OPERATION
QUANTUM-WELLS
LASER-DIODES
ORIENTATION
SEMICONDUCTORS
DEPENDENCE
ANISOTROPY
SEMIPOLAR
SAPPHIRE
FILMS
Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition
期刊论文
japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1
Zhong, L
;
Ma, XY
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浏览/下载:56/0
  |  
提交时间:2010/03/08
tensile strain
GaAsP/GaInP
photoluminescence
quantum well
laser diodes
LP-MOCVD
Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 19, 页码: art. no. 191118
Zhang JY
;
Cai LE
;
Zhang BP
;
Li SQ
;
Lin F
;
Shang JZ
;
Wang DX
;
Lin KC
;
Yu JZ
;
Wang QM
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  |  
浏览/下载:27/1
  |  
提交时间:2010/03/08
gallium compounds
Modulation response analysis of 1.3 mu m quantum dot vertical-cavity surface-emitting lasers
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 2, 页码: 863-870
Peng, HL (Peng Hong-Ling)
;
Han, Q (Han Qin)
;
Yang, XH (Yang Xiao-Hong)
;
Niu, ZC (Niu Zhi-Chuan)
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  |  
浏览/下载:72/0
  |  
提交时间:2010/03/29
quantum dots
The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content
期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497
Wu DH
;
Niu ZC
;
Zhang SY
;
Ni HQ
;
He ZH
;
Sun Z
;
Han Q
;
Wu RH
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  |  
浏览/下载:88/0
  |  
提交时间:2010/04/11
photoluminescence
molecular beam epitaxy
quantum wells
nitrides
semiconducting III-V materials
IMPROVED LUMINESCENCE EFFICIENCY
LASER-DIODES
TEMPERATURE
SURFACTANT
EMISSION
NITROGEN
ORIGIN
Stochastic resonance in single-mode semiconductor lasers
期刊论文
physica a-statistical mechanics and its applications, 2006, 卷号: 368, 期号: 1, 页码: 31-37
Wang J
;
Bai YM
;
Cao L
;
Wu DJ
;
Ma XY
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  |  
浏览/下载:87/0
  |  
提交时间:2010/04/11
stochastic resonance
carrier noise
photon noise
semiconductor lasers
linear approximation method
MODULATED BISTABLE SYSTEMS
RING LASER
NOISE
DRIVEN
GAIN
Influence of nitridation time on the morphology of GaN nanorods synthesized by nitriding Ga2O3/ZnO films
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 117-120
Gao HY (Gao Haiyong)
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浏览/下载:34/0
  |  
提交时间:2010/04/11
GaN nanorods
Ga2O3/ZnO films
RF magnetron sputtering
nitridation
OPTICAL-PROPERTIES
LASER-DIODES
ZNO
SUBSTRATE
NANOWIRES
LAYER
Measurement of gain spectrum for semiconductor lasers utilizing integrations of product of emission spectrum and a phase function over one mode interval
期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 11, 页码: 1510-1512
作者:
Yu LJ
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  |  
浏览/下载:606/10
  |  
提交时间:2010/08/12
gain measurement
optical spectrum analyzer (OSA)
semiconductor lasers
DIODES
Whispering-gallery-likel modes in square resonators
期刊论文
ieee journal of quantum electronics, 2003, 卷号: 39, 期号: 9, 页码: 1106-1110
Guo WH
;
Huang YZ
;
Lu QY
;
Vu LJ
收藏
  |  
浏览/下载:409/3
  |  
提交时间:2010/08/12
microcavities
semiconductor lasers
square resonators
whispering-gallery (WG) modes
MICRODISK INJECTION-LASER
MICROCAVITIES
MICROLASERS
SIMULATION
RESONANCES
CAVITIES
EMISSION
CRYSTALS
Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
期刊论文
applied physics letters, 2002, 卷号: 80, 期号: 20, 页码: 3769-3771
作者:
Xu B
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  |  
浏览/下载:89/3
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
HIGH-POWER
LASER-DIODES
NM
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