Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region
	Zhang JY ; Cai LE ; Zhang BP ; Li SQ ; Lin F ; Shang JZ ; Wang DX ; Lin KC ; Yu JZ ; Wang QM
刊名	applied physics letters
	2008
卷号	93 期号:19 页码:art. no. 191118
关键词	gallium compounds
ISSN号	0003-6951
通讯作者	zhang, jy, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: bzhang@xmu.edu.cn ; qmwang@red.semi.ac.cn
中文摘要	we have fabricated and characterized gan-based vertical cavity surface emitting lasers (vcsels) with a unique active region structure, in which three sets of ingan asymmetric coupled quantum wells are placed in a half-wavelength (0.5 lambda) length. lasing action was achieved under optical pumping at room temperature with a threshold pumping energy density of about 6.5 mj/cm(2). the laser emitted a blue light at 449.5 nm with a narrow linewidth below 0.1 nm and had a high spontaneous emission factor of about 3.0x10(-2). the results indicate that this active region structure is useful in reducing the process difficulties and improving the threshold characteristics of gan-based vcsels.
学科主题	半导体物理
收录类别	SCI
资助信息	national high technology research and development program of china 2006aa03z409 national science foundation of china 60876007 this work was supported by the national high technology research and development program of china (no. 2006aa03z409), and the national science foundation of china (no. 60876007).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6348]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang JY,Cai LE,Zhang BP,et al. Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region[J]. applied physics letters,2008,93(19):art. no. 191118.
APA	Zhang JY.,Cai LE.,Zhang BP.,Li SQ.,Lin F.,...&Wang QM.(2008).Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region.applied physics letters,93(19),art. no. 191118.
MLA	Zhang JY,et al."Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region".applied physics letters 93.19(2008):art. no. 191118.