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科研机构
半导体研究所 [10]
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期刊论文 [9]
会议论文 [1]
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2009 [1]
2006 [4]
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半导体材料 [10]
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Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao J
收藏
  |  
浏览/下载:47/4
  |  
提交时间:2011/07/05
ZnO
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
PULSED-LASER DEPOSITION
THIN-FILMS
PLD TECHNIQUE
GROWTH
SAPPHIRE
TEMPERATURE
Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 12, 页码: 2982-2987
Cheng BC
;
Qu SC
;
Zhou HY
;
Wang ZG
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  |  
浏览/下载:119/0
  |  
提交时间:2010/04/11
SPRAY-PYROLYSIS TECHNIQUE
SOL-GEL PROCESS
ZINC ALUMINATE
OPTICAL-PROPERTIES
CATHODOLUMINESCENT CHARACTERISTICS
HYDROTHERMAL SYNTHESIS
NANOCRYSTALLINE
COMBUSTION
SPECTRA
METHANE
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:102/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots
期刊论文
electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:78/0
  |  
提交时间:2010/04/11
SEMICONDUCTOR-DEVICES
TRANSPORT
STATES
BISTABILITY
VOLTAGE
LASERS
DIODE
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
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  |  
浏览/下载:36/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 107-112
Wang HL
;
Ning D
;
Zhu HJ
;
Chen F
;
Wang H
;
Wang XD
;
Feng SL
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  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
self-assembled quantum dots
InAs/GaAs
DLTS
PL
activation energy
capture barrier
ENERGY-LEVELS
CARRIER RELAXATION
GROWTH
Characterization of hot-electron effects on flicker noise in III-V nitride based heterojunctions
期刊论文
mrs internet journal of nitride semiconductor research, 1999, 卷号: 4, 期号: 0, 页码: art.no.g6.4
Ho WY
;
Fong WK
;
Surya C
;
Tong KY
;
Lu LW
;
Ge WK
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  |  
浏览/下载:37/0
  |  
提交时间:2010/08/12
FLUCTUATIONS
QUALITY
DIODES
The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy
期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 1-2, 页码: 93-96
Zhang JP
;
Sun DZ
;
Li XB
;
Wang XL
;
Fu RH
;
Kong MY
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/08/12
GaN
2DEG
MD heterostructure
MBE
photoluminescence
GAN
LUMINESCENCE
PLASMA
GALLIUM NITRIDE
THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS
期刊论文
physical review b, 1994, 卷号: 50, 期号: 8, 页码: 5189-5195
REN GB
;
WANG ZG
;
XU B
;
BING Z
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
SPIN-RESONANCE SIGNAL
ASGA ANTISITE DEFECT
METASTABLE EL2
GROWN GAAS
PHOTOCONDUCTIVITY
PHOTORESPONSE
PHOTOCURRENT
SPECTRUM
RECOVERY
EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON
期刊论文
applied surface science, 1993, 卷号: 64, 期号: 3, 页码: 259-263
WONG YW
;
YANG XQ
;
CHAN PW
;
TONG KY
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
REACTIVE ATMOSPHERE
BORON
IRRADIATION
SEMICONDUCTORS
JUNCTIONS
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