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CORC

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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：13/0  |  提交时间：2010/12/05
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure 期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG; Kong, GL; Zeng, XB; Hao, HY; Liu, FZ
收藏  |  浏览/下载：104/29  |  提交时间：2010/03/08
A comparison between contactless electroreflectance and photoreflectance spectra from n-doped GaAs on a semi-insulating GaAs substrate 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 10, 页码: 1467-1471
Jin P (Jin Peng); Pan SH (Pan S. H.); Li YG (Li Y. G.); Zhang CZ (Zhang C. Z.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：27/0  |  提交时间：2010/04/11
Structural characterization of cubic GaN grown on GaAs(001) substrates 期刊论文
chinese journal of electronics, 2001, 卷号: 10, 期号: 2, 页码: 219-222
Zheng XH; Qu B; Wang YT; Yang H; Liang JW; Han JY
收藏  |  浏览/下载：93/4  |  提交时间：2010/08/12
Residual donors in undoped LEC InP 会议论文
11th international semiconducting and insulating materials conference (simc-xi), canberra, australia, jul 03-07, 2000
Zhao YW; Sun NF; Sun TN; Lin LY; Wu XW; Guo WL; Wu X; Bi KY
收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29

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