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科研机构
半导体研究所 [10]
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期刊论文 [7]
会议论文 [3]
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2009 [1]
2007 [2]
2006 [3]
2004 [1]
1999 [2]
1998 [1]
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学科主题
半导体材料 [10]
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Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer
期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:
Zhao J
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  |  
浏览/下载:43/4
  |  
提交时间:2011/07/05
ZnO
Pulsed laser deposition
X-ray diffraction
Photoluminescence
Reflection high-energy electron diffraction
PULSED-LASER DEPOSITION
THIN-FILMS
PLD TECHNIQUE
GROWTH
SAPPHIRE
TEMPERATURE
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang)
;
Wang CM (Wang Cuimei)
;
Hu GX (Hu Guoxin)
;
Mao HL (Mao Hongling)
;
Fang CB (Fang Cebao)
;
Wang JX (Wang Junxi)
;
Ran JX (Ran Junxue)
;
Li HP (Li Hanping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang, Zhanguo)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/03/29
2DEG
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
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  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 5, 页码: 1251-1254
作者:
Wei HY
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  |  
浏览/下载:61/0
  |  
提交时间:2010/04/11
OPTICAL-PROPERTIES
RAMAN-SCATTERING
EPILAYERS
LUMINESCENCE
ALINGAN
PHONON
LAYERS
FILMS
ALN
GAN
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
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  |  
浏览/下载:167/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer
期刊论文
journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273
Shen WJ
;
Wang J
;
Wang QY
;
Duan Y
;
Zeng YP
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  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
ZINC-OXIDE FILMS
MOLECULAR-BEAM EPITAXY
SAPPHIRE
GROWTH
Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85
Wu, JJ
;
Li, DB
;
Lu, Y
;
Han, XX
;
Li, JM
;
Wei, HY
;
Kang, TT
;
Wang, XH
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/17
cracks
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
会议论文
40th electronic materials conference (emc-40), charlottesville, virginia, jun 24-26, 1998
作者:
Xu B
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/11/15
bimodal distribution
photoluminescence (PL)
quantum-size effect
GE
ENSEMBLES
SI(100)
GROWTH
SHAPE
Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
期刊论文
journal of electronic materials, 1999, 卷号: 28, 期号: 5, 页码: 528-531
作者:
Xu B
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/08/12
bimodal distribution
photoluminescence (PL)
quantum-size effect
ENSEMBLES
SI(100)
GROWTH
SHAPE
GE
Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
期刊论文
science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207
Wang LS
;
Liu XG
;
Zan YD
;
Wang D
;
Wang J
;
Lu DC
;
Wang ZG
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/08/12
fabrication of GaN epitaxial films
Al2O3/Si(001) substrate
metalorganic chemical deposition
crystal structure and surface morphology
photoluminescence spectrum
GROWTH
DIODES
BUFFER LAYER
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