Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates

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	Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates
	Wang LS ; Liu XG ; Zan YD ; Wang D ; Wang J ; Lu DC ; Wang ZG
刊名	science in china series e-technological sciences
	1998
卷号	41 期号:2 页码:203-207
关键词	fabrication of GaN epitaxial films Al2O3/Si(001) substrate metalorganic chemical deposition crystal structure and surface morphology photoluminescence spectrum GROWTH DIODES BUFFER LAYER
ISSN号	1006-9321
通讯作者	wang ls,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	single crystal gan films of hexagonal modification have been fabricated on al2o3/si (001) substrates via a low pressure metalorganic chemical deposition (lp-mocvd) method. the full width at half-maximum of (0002) x-ray diffraction peak for the gan film 1.1 mu m thick was 72 arcmin. and the mosaic structure of the film was the main cause of broadening to the x-ray diffraction peak. al room temperature, the photoluminescence (pl) spectrum of gan exhibited near band edge emission peaking at 365 nm.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13226]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang LS,Liu XG,Zan YD,et al. Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates[J]. science in china series e-technological sciences,1998,41(2):203-207.
APA	Wang LS.,Liu XG.,Zan YD.,Wang D.,Wang J.,...&Wang ZG.(1998).Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates.science in china series e-technological sciences,41(2),203-207.
MLA	Wang LS,et al."Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates".science in china series e-technological sciences 41.2(1998):203-207.