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科研机构
半导体研究所 [11]
内容类型
期刊论文 [10]
会议论文 [1]
发表日期
2013 [2]
2011 [3]
2009 [1]
2008 [1]
2007 [1]
2006 [2]
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半导体材料 [11]
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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors
期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang
;
Lin Zhao-Jun
;
Lu Yuan-Jie
;
Luan Chong-Biao
;
Wang Zhan-Guo
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2013/09/17
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ
;
Lin ZJ
;
Corrigan TD
;
Zhao JZ
;
Cao ZF
;
Meng LG
;
Luan CB
;
Wang ZG
;
Chen H
收藏
  |  
浏览/下载:64/6
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
GAN
DEPENDENCE
CONTACTS
STATES
NI
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:57/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Luan CB
;
Cao ZF
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:67/9
  |  
提交时间:2011/07/05
2-DIMENSIONAL ELECTRON-GAS
INTERFACIAL LAYER
MOBILITY
Effect of silver growth temperature on the contacts between Ag and ZnO thin films
期刊论文
science in china series e-technological sciences, 2009, 卷号: 52, 期号: 9, 页码: 2779-2784
作者:
Li XK
收藏
  |  
浏览/下载:90/1
  |  
提交时间:2010/03/08
ZnO
Schottky barrier
interface
MSM structure
Influence of electron irradiation on hydrothermally grown zinc oxide single crystals
期刊论文
semiconductor science and technology, 2008, 卷号: 23, 期号: 9, 页码: art. no. 095028
Lu LW
;
So CK
;
Zhu CY
;
Gu QL
;
Li CJ
;
Fung S
;
Brauer G
;
Anwand W
;
Skorupa W
;
Ling CC
收藏
  |  
浏览/下载:110/1
  |  
提交时间:2010/03/08
SCHOTTKY CONTACTS
Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures
期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: art.no.173507
Zhao J (Zhao, Jianzhi)
;
Lin Z (Lin, Zhaojun)
;
Corrigan TD (Corrigan, Timothy D.)
;
Wang Z (Wang, Zhen)
;
You Z (You, Zhidong)
;
Wang Z (Wang, Zhanguo)
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2010/03/29
FIELD-EFFECT TRANSISTORS
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:
Ye XL
;
Xu B
;
Jin P
收藏
  |  
浏览/下载:90/0
  |  
提交时间:2010/04/11
GAAS
SPECTROSCOPY
PARAMETERS
TRANSPORT
LASERS
ENERGY
STATES
HOLE
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