CORC

浏览/检索结果: 共36条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures 期刊论文
semiconductor science and technology, 2014, 卷号: 29, 期号: 4, 页码: 045015
Feng, YX; Liu, GP; Yang, SY; Wei, HY; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:12/0  |  提交时间:2015/04/02
Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 11, 页码: 117803
Wang Wei-Ying; Liu Gui-Peng; Jin Peng; Mao De-Feng; Li Wei; Wang Zhan-Guo; Tian Wu; Chen Chang-Qing
收藏  |  浏览/下载:23/0  |  提交时间:2015/03/20
Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 7, 页码: 7305
Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo
收藏  |  浏览/下载:15/0  |  提交时间:2014/03/18
Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates 期刊论文
applied surface science, 2013, 卷号: 270, 页码: 301-306
Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo
收藏  |  浏览/下载:28/0  |  提交时间:2013/09/17
Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates 期刊论文
applied surface science, 2013, 卷号: 270, 页码: 301-306
Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo
收藏  |  浏览/下载:17/0  |  提交时间:2014/03/17
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载:23/0  |  提交时间:2012/02/06
Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:  Zhang Y;  Li YB
收藏  |  浏览/下载:53/5  |  提交时间:2011/07/05
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载:28/0  |  提交时间:2012/06/14
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载:23/0  |  提交时间:2012/06/14
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载:48/5  |  提交时间:2011/07/05


©版权所有 ©2017 CSpace - Powered by CSpace