Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells | |
Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo | |
刊名 | chinese physics b
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2013 | |
卷号 | 22期号:7页码:7305 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-03-18 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24548] ![]() |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo. Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells[J]. chinese physics b,2013,22(7):7305. |
APA | Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo.(2013).Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells.chinese physics b,22(7),7305. |
MLA | Wang Jian-Xia, Yang Shao-Yan, Wang Jun, Liu Gui-Peng, Li Zhi-Wei, Li Hui-Jie, Jin Dong-Dong, Liu Xiang-Lin, Zhu Qin-Sheng, Wang Zhan-Guo."Electron mobility limited by surface and interface roughness scattering in AlxGaN-GaN quantum wells".chinese physics b 22.7(2013):7305. |
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