Electron mobility in modulation-doped AlSb/InAs quantum wells

	Electron mobility in modulation-doped AlSb/InAs quantum wells
	Zhang Y; Li YB
刊名	journal of applied physics
	2011
卷号	109 期号:7 页码:article no.73703
关键词	ACOUSTIC-PHONON-SCATTERING LOW-POWER APPLICATIONS TRANSPORT-PROPERTIES INTERFACE ROUGHNESS INAS/ALSB HEMTS HETEROSTRUCTURES INAS TRANSISTORS GAS LAYERS
通讯作者	zhang, y, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. terahertzantenna@163.com ; ypzeng@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	chinese academy of sciences [iscas2009t04]; beijing municipal natural science foundation [2112040]; beijing nova program [2010b056]
公开日期	2011-07-05 ; 2011-07-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20809]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhang Y,Li YB. Electron mobility in modulation-doped AlSb/InAs quantum wells[J]. journal of applied physics,2011,109(7):article no.73703.
APA	Zhang Y,&Li YB.(2011).Electron mobility in modulation-doped AlSb/InAs quantum wells.journal of applied physics,109(7),article no.73703.
MLA	Zhang Y,et al."Electron mobility in modulation-doped AlSb/InAs quantum wells".journal of applied physics 109.7(2011):article no.73703.