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科研机构
半导体研究所 [18]
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期刊论文 [15]
会议论文 [3]
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2011 [4]
2008 [1]
2007 [1]
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2003 [5]
2002 [1]
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半导体材料 [18]
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Effect of gas pressure on the properties of silicon thin film
期刊论文
gongneng cailiao/journal of functional materials, 2011, 卷号: 42, 期号: 8, 页码: 1489-1491
Hao, Hui-Ying
;
Li, Wei-Min
;
Zeng, Xiang-Bo
;
Kong, Guang-Lin
;
Liao, Xian-Bo
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2012/06/14
Amorphous films
Chemical vapor deposition
Deposition
Microcrystalline silicon
Microstructure
Photoelectricity
Plasma deposition
Plasma enhanced chemical vapor deposition
Pressure effects
Semiconducting silicon compounds
Transport properties
VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328
Huang SL
;
Wu Y
;
Zhu XF
;
Li LX
;
Wang ZG
;
Wang LZ
;
Lu GQ
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2011/07/05
SILICON NANOWIRES
SURFACE MIGRATION
NANOSTRUCTURES
CATALYST
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:
Yin ZG
;
Zhang XW
;
Tan HR
;
Fan YM
;
Zhang SG
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  |  
浏览/下载:42/3
  |  
提交时间:2011/07/05
HIGH-PRESSURE SYNTHESIS
VAPOR-DEPOSITION
NUCLEATION
EMISSION
DIAMOND
GROWTH
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2012/06/14
Aluminum
Annealing
Ion implantation
Pressure effects
Semiconducting silicon compounds
Silicon carbide
Surface roughness
Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition
期刊论文
thin solid films, 2008, 卷号: 516, 期号: 6, 页码: 925-928
Zhang, PF
;
Wei, HY
;
Cong, GW
;
Hu, WG
;
Fan, HB
;
Wu, JJ
;
Zhu, QS
;
Liu, XL
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  |  
浏览/下载:29/3
  |  
提交时间:2010/03/08
X-ray diffraction
metal-organic chemical vapor deposition
zinc oxide
structural properties
Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD
期刊论文
modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Luo, MC
;
Li, JM
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  |  
浏览/下载:42/0
  |  
提交时间:2010/03/08
aluminum nitride
low pressure metalorganic chemical vapor deposition (LP-MOCVD)
V/III ratio
preferential orientation growth mechanism
ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845
Zhao J (Zhao Jie)
;
Hu LZ (Hu Lizhong)
;
Wang ZY (Wang Zhaoyang)
;
Sun J (Sun Jie)
;
Wang ZJ (Wang Zhijun)
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  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
ZnO
pulsed laser deposition
oxygen pressure
annealing
X-ray diffraction
photoluminescence
ULTRAVIOLET EMISSION
ROOM-TEMPERATURE
ZINC-OXIDE
Effects of the sulfur pressure on pyrite FeS2 films prepared by sulfurizing thermally iron films
期刊论文
journal of crystal growth, 2003, 卷号: 257, 期号: 3-4, 页码: 286-292
Wan DY
;
Wang BY
;
Wang YT
;
Sun H
;
Zhang RG
;
Wei L
收藏
  |  
浏览/下载:327/6
  |  
提交时间:2010/08/12
crystallization
sulfidation
iron pyrite films
semiconducting materials
solar cells
THIN-FILMS
ATMOSPHERE
Effects of the crystal structure on electrical and optical properties of pyrite FeS2 films prepared by thermally sulfurizing iron films
期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 230-238
Wan DY
;
Wang YT
;
Wang BY
;
Ma CX
;
Sun H
;
Wei L
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/08/12
crystal structure
sulfidation of iron films
iron pyrite films
semiconducting materials
solar cells
THIN-FILMS
ELECTRODEPOSITION
ATMOSPHERE
PRESSURE
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Zhang ZC
;
Ren BY
;
Chen YH
;
Yang SY
;
Wang ZG
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/11/15
Czochralski method
growth from melt
semiconductor silicon
argon gas flow
computer simulation
oxygen content
FURNACE PRESSURE
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