Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition
Zhang, PF ; Wei, HY ; Cong, GW ; Hu, WG ; Fan, HB ; Wu, JJ ; Zhu, QS ; Liu, XL
刊名thin solid films
2008
卷号516期号:6页码:925-928
关键词X-ray diffraction metal-organic chemical vapor deposition zinc oxide structural properties
ISSN号0040-6090
通讯作者zhang, pf, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhangpanf@semi.ac.cn
中文摘要zno films were grown at low pressure in a vertical metal-organic vapor deposition (mocvd) reactor with a rotating disk. the structural and morphological properties of the zno films grown at different disk rotation rate (drr) were investigated. the growth rate increases with the increase of drr. the zno film grown at the drr of 450 revolutions per minute (rpm) has the lowest x-ray rocking curve full width at half maximum and shows the best crystalline quality and morphology. in addition, the crystalline quality and morphology are improved as the drr increased but both are degraded when the drr is higher than 450 rpm. these results can help improve in understanding the rotation effects on the zno films grown by mocvd. (c) 2007 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/6868]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhang, PF,Wei, HY,Cong, GW,et al. Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition[J]. thin solid films,2008,516(6):925-928.
APA Zhang, PF.,Wei, HY.,Cong, GW.,Hu, WG.,Fan, HB.,...&Liu, XL.(2008).Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition.thin solid films,516(6),925-928.
MLA Zhang, PF,et al."Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition".thin solid films 516.6(2008):925-928.
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