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Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures 期刊论文
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun); Fang GJ (Fang Guojia); Fu Q (Fu Qiang); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong)
收藏  |  浏览/下载:21/0  |  提交时间:2010/04/11
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741
Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载:29/0  |  提交时间:2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载:55/0  |  提交时间:2010/04/11
In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 927-930
Han, YH; Luo, JF; Hao, AM; Gao, CX; Xie, HS; Qu, SC; Liu, HW; Zou, GT
收藏  |  浏览/下载:36/0  |  提交时间:2010/03/17
Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
作者:  Li DB;  Wei HY;  Han XX
收藏  |  浏览/下载:58/22  |  提交时间:2010/03/17
cracks  
Silica and alumina thin films grown by liquid phase deposition 期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1725-1728
Sun, J; Hu, LZ; Wang, ZY; Du, GT
收藏  |  浏览/下载:25/0  |  提交时间:2010/03/17
Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method 期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25
Qu BZ; Chen Z; Lu DC; Han P; Liu XG; Wang XH; Wang D; Zhu QS; Wang ZG
收藏  |  浏览/下载:37/0  |  提交时间:2010/08/12
Progress of Si-based nanocrystalline luminescent materials 期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC; Zhao XW; Fu GS
收藏  |  浏览/下载:84/0  |  提交时间:2010/08/12
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
Liu JP; Huang DD; Li JP; Lin YX; Sun DZ; Kong MY
收藏  |  浏览/下载:70/14  |  提交时间:2010/08/12


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