Silica and alumina thin films grown by liquid phase deposition

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Silica and alumina thin films grown by liquid phase deposition
	Sun, J ; Hu, LZ ; Wang, ZY ; Du, GT
刊名	pricm 5: the fifth pacific rim international conference on advanced materials and processing
	2005
卷号	pts 1-5 期号:475-479 页码:1725-1728
关键词	silica alumina liquid phase deposition semiconductors ELECTRICAL CHARACTERISTICS DIOXIDE FILMS OXIDE-FILMS
ISSN号	0255-5476
通讯作者	sun, j, dalian univ technol, dept phys, dalian 116023, peoples r china. 电子邮箱地址: albertjefferson@sohu.com ; bandaoti@dlut.edu.cn
中文摘要	this work demonstrates the condition optimization during liquid phase deposition (lpd) of sio2/gaas films. lpd method is further applied to form al2o3 films on semiconductors with poison-free materials. proceeding at room temperature with inexpensive equipment, lpd of silica and alumina films is potentially serviceable in microelectronics and related spheres.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8762]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sun, J,Hu, LZ,Wang, ZY,et al. Silica and alumina thin films grown by liquid phase deposition[J]. pricm 5: the fifth pacific rim international conference on advanced materials and processing,2005,pts 1-5(475-479):1725-1728.
APA	Sun, J,Hu, LZ,Wang, ZY,&Du, GT.(2005).Silica and alumina thin films grown by liquid phase deposition.pricm 5: the fifth pacific rim international conference on advanced materials and processing,pts 1-5(475-479),1725-1728.
MLA	Sun, J,et al."Silica and alumina thin films grown by liquid phase deposition".pricm 5: the fifth pacific rim international conference on advanced materials and processing pts 1-5.475-479(2005):1725-1728.