In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure

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	In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure
	Han, YH ; Luo, JF ; Hao, AM ; Gao, CX ; Xie, HS ; Qu, SC ; Liu, HW ; Zou, GT
刊名	chinese physics letters
	2005
卷号	22 期号:4 页码:927-930
关键词	SUPERCONDUCTIVITY
ISSN号	0256-307x
通讯作者	gao, cx, jilin univ, state key lab superhard mat, changchun 130012, peoples r china. 电子邮箱地址: cxgao599@yahoo.com.cn
中文摘要	an effective method is developed to fabricate metallic microcircuits in diamond anvil cell (dac) for resistivity measurement under high pressure. the resistivity of nanocrystal zns is measured under high pressure up to 36.4 gpa by using designed dac. the reversibility and hysteresis of the phase transition are observed. the experimental data is confirmed by an electric current field analysis accurately. the method used here can also be used under both ultrahigh pressure and high temperature conditions.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8802]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han, YH,Luo, JF,Hao, AM,et al. In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure[J]. chinese physics letters,2005,22(4):927-930.
APA	Han, YH.,Luo, JF.,Hao, AM.,Gao, CX.,Xie, HS.,...&Zou, GT.(2005).In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure.chinese physics letters,22(4),927-930.
MLA	Han, YH,et al."In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure".chinese physics letters 22.4(2005):927-930.