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| Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者: Xu B
  收藏 | 浏览/下载：51/3 | 提交时间：2011/07/05
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| Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112
Song YF (Song Yafeng); Lu YW (Lu Yanwu); Zhang BA (Zhang Biao); Xu XQ (Xu Xiaoqing); Wang J (Wang Jun); Guo Y (Guo Yan); Shi K (Shi Kai); Li ZW (Li Zhiwei); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏 | 浏览/下载：28/0 | 提交时间：2010/12/05
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| Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者: Zhao J
收藏 | 浏览/下载：43/4 | 提交时间：2011/07/05
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| Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots 期刊论文
solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 606-610
作者: Jin P; Xu B
收藏 | 浏览/下载：100/0 | 提交时间：2010/04/11
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| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者: Ye XL; Xu B; Jin P
收藏 | 浏览/下载：90/0 | 提交时间：2010/04/11
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| Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics 期刊论文
semiconductor science and technology, 2004, 卷号: 19, 期号: 6, 页码: 759-763
Peng YC; Fu GS; Yu W; Li SQ; Wang YL
收藏 | 浏览/下载：54/15 | 提交时间：2010/03/09
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| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308
作者: Xu B; Li CM; Jin P; Ye XL; Li DB
收藏 | 浏览/下载：97/0 | 提交时间：2010/08/12
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| Optical properties of InGaAs quantum dots formed on InAlAs wetting layer 期刊论文
journal of crystal growth, 2001, 卷号: 224, 期号: 1-2, 页码: 41-46
作者: Xu B; Ye XL
收藏 | 浏览/下载：77/2 | 提交时间：2010/08/12
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| Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368
Wang XD; Niu ZC; Feng SL; Miao ZH
收藏 | 浏览/下载：93/3 | 提交时间：2010/08/12
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| X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH
收藏 | 浏览/下载：48/0 | 提交时间：2010/08/12
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