Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

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	Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
	Xu B; Li CM; Jin P; Ye XL; Li DB
刊名	journal of crystal growth
	2002
卷号	241 期号:3 页码:304-308
关键词	atomic force microscopy low dimensional structures nanostructures molecular beam epitaxy semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE THRESHOLD CURRENT MU-M LASERS
ISSN号	0022-0248
通讯作者	zhang zy,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	we have investigated the effect of inalas/ingaas cap layer on the optical properties of self-assembled inas/gaas quantum dots (qds). we find that the photoluminescence emission energy, linewidth and the energy separation between the ground and first excited states of inas qds depend on the in composition and the thickness of thin inalas cap layer. furthermore, the large energy separation of 103 mev was obtained from inas/gaas qds with emission at 1.35 pm at room temperature. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11870]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Li CM,Jin P,et al. Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots[J]. journal of crystal growth,2002,241(3):304-308.
APA	Xu B,Li CM,Jin P,Ye XL,&Li DB.(2002).Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots.journal of crystal growth,241(3),304-308.
MLA	Xu B,et al."Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots".journal of crystal growth 241.3(2002):304-308.