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科研机构
半导体研究所 [16]
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期刊论文 [16]
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2010 [3]
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半导体材料 [16]
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All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser
期刊论文
journal of lightwave technology, 2010, 卷号: 28, 期号: 17, 页码: 2521-2525
Sun Y (Sun Yu)
;
Pan JAQ (Pan Jiao Qing)
;
Zhao LJA (Zhao Ling Juan)
;
Chen WX (Chen Weixi)
;
Wang W (Wang Wei)
;
Wang L (Wang Li)
;
Zhao XAF (Zhao Xiao Fan)
;
Lou CY (Lou Cai Yun)
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/11/14
All optical clock recovery
distributed feedback (DFB) lasers
injection locking
semiconductor lasers
quantum well intermixing (QWI)
optical signal processing
3R REGENERATION
DIODES
Intersubband absorption energy shifts in 3-level system for asymmetric quantum well terahertz emitters
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083112
Song YF (Song Yafeng)
;
Lu YW (Lu Yanwu)
;
Zhang BA (Zhang Biao)
;
Xu XQ (Xu Xiaoqing)
;
Wang J (Wang Jun)
;
Guo Y (Guo Yan)
;
Shi K (Shi Kai)
;
Li ZW (Li Zhiwei)
;
Liu XL (Liu Xianglin)
;
Yang SY (Yang Shaoyan)
;
Zhu QS (Zhu Qinsheng)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/12/05
OPTICAL PHONON ENERGY
INVERSION-LAYERS
TRANSITIONS
RELAXATION
LASERS
STATES
The Fabrication of Eight-Channel DFB Laser Array Using Sampled Gratings
期刊论文
ieee photonics technology letters, 2010, 卷号: 22, 期号: 5, 页码: 353-355
Zhu HL (Zhu Hongliang)
;
Xu XD (Xu Xiaodong)
;
Wang H (Wang Huan)
;
Kong DH (Kong Duanhua)
;
Liang S (Liang Song)
;
Zhao LJ (Zhao Lingjuan)
;
Wang W (Wang Wei)
收藏
  |  
浏览/下载:252/56
  |  
提交时间:2010/04/22
Distributed-feedback (DFB) lasers
sampled gratings
semiconductor laser arrays
wavelength-division multiplexing (WDM)
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.)
;
Wu J (Wu J.)
;
Xu B (Xu B.)
;
Jin P (Jin P.)
;
Hu LJ (Hu L. J.)
;
Liang LY (Liang L. Y.)
;
Wang ZG (Wang Z. G.)
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  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
metamorphic
long wavelength
quantum dots
molecular beam epitaxy
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
1.3 MU-M
GAAS
EMISSION
RANGE
ISLANDS
ARRAYS
LASERS
Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots
期刊论文
electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170
作者:
Ye XL
;
Xu B
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  |  
浏览/下载:77/0
  |  
提交时间:2010/04/11
SEMICONDUCTOR-DEVICES
TRANSPORT
STATES
BISTABILITY
VOLTAGE
LASERS
DIODE
Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
期刊论文
solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 606-610
作者:
Jin P
;
Xu B
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  |  
浏览/下载:100/0
  |  
提交时间:2010/04/11
nanostructures
semiconductors
optical properties
luminescence
WAVELENGTH
NANOSTRUCTURES
INTERBAND
LASERS
The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer
期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1791-1794
Shi, GX
;
Xu, B
;
Jin, P
;
Ye, XL
;
Cui, CX
;
Zhang, CL
;
Wu, J
;
Wang, ZG
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/03/17
quantum dots
strain buffer layer
InAs
photoluminescence
WELL
LASER
LAYER
Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
作者:
Xu B
;
Ye XL
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  |  
浏览/下载:63/0
  |  
提交时间:2010/08/12
photoluminescence
molecular beam epitaxy
nanomaterials
quantum dots
semiconducting III-V materials
1.3 MU-M
TEMPERATURE-DEPENDENCE
EXCITED-STATES
INXGA1-XAS
GROWTH
LASERS
INP
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
期刊论文
journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308
作者:
Xu B
;
Li CM
;
Jin P
;
Ye XL
;
Li DB
收藏
  |  
浏览/下载:97/0
  |  
提交时间:2010/08/12
atomic force microscopy
low dimensional structures
nanostructures
molecular beam epitaxy
semiconducting III-V materials
laser diodes
TEMPERATURE-DEPENDENCE
THRESHOLD CURRENT
MU-M
LASERS
Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260
作者:
Zhang SM
;
Zhao DG
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  |  
浏览/下载:88/5
  |  
提交时间:2010/08/12
wafer bonding
cubic
GaN/GaAs(001)
Si-substrate
LIGHT-EMITTING-DIODES
P-TYPE GAN
RESISTANCE
CONTACT
LASER
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