Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer

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	Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
	Xu B; Ye XL
刊名	journal of crystal growth
	2002
卷号	240 期号:3-4 页码:395-400
关键词	photoluminescence molecular beam epitaxy nanomaterials quantum dots semiconducting III-V materials 1.3 MU-M TEMPERATURE-DEPENDENCE EXCITED-STATES INXGA1-XAS GROWTH LASERS INP
ISSN号	0022-0248
通讯作者	he j,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	a high density of 1.02 x 10(11) cm(-2) of inas islands with in(0.15)gao(0.85)as underlying layer has been achieved on gaas (10 0) substrate by solid source molecular beam epitaxy. atomic force microscopy and pl spectra show the size evolution of inas islands. a 1.3 mum photoluminescence (pl) from inas islands with in(0.15)gao(0.85)as underlying layer and ingaas strain-reduced layer has been obtained. our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11886]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Ye XL. Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer[J]. journal of crystal growth,2002,240(3-4):395-400.
APA	Xu B,&Ye XL.(2002).Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer.journal of crystal growth,240(3-4),395-400.
MLA	Xu B,et al."Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer".journal of crystal growth 240.3-4(2002):395-400.