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Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏  |  浏览/下载：40/4  |  提交时间：2011/07/05
Study on the perfection of in situ P-injection synthesis LEC-InP single crystals 期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 17-20
作者:  Zhou XL
收藏  |  浏览/下载：441/157  |  提交时间：2010/03/09
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY
收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 530-533
Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
TEM study of dislocations in ZnTe/GaAs heterostructure grown by hot-wall epitaxy 期刊论文
defect and diffusion forum, 1999, 卷号: 174, 期号: 0, 页码: 59-65
作者:  Han PD
收藏  |  浏览/下载：39/0  |  提交时间：2010/08/12
Stoichiometry in GaAs grown in outer space measured nondestructively 会议论文
9th international symposium on nondestructive characterization of materials, sydney, australia, jun 28-jul 02, 1999
Chen NF; Zhong XG; Lin LY
收藏  |  浏览/下载：10/0  |  提交时间：2010/10/29
Improvement of stoichiometry in semi-insulating gallium arsenide grown under microgravity 期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 3, 页码: 586-588
Lin LY; Zhong XR; Chen NF
收藏  |  浏览/下载：38/0  |  提交时间：2010/08/12
Stoichiometric defects in semi-insulating GaAs 期刊论文
journal of crystal growth, 1997, 卷号: 173, 期号: 0, 页码: 325-329
Chen NF; He HJ; Wang YT; Lin LY
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/17
Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method 期刊论文
applied physics letters, 1996, 卷号: 69, 期号: 25, 页码: 3890-3892
Chen NF; Wang YT; He HJ; Wang ZG; Lin LY; Oda O
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/17
GAAS  
Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching 期刊论文
journal of crystal growth, 1996, 卷号: 167, 期号: 0, 页码: 766-768
Chen NF; He HJ; Wang YT; Pan K; Lin LY
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17
GAAS  

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