Stoichiometry in GaAs grown in outer space measured nondestructively

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	Stoichiometry in GaAs grown in outer space measured nondestructively
	Chen NF ; Zhong XG ; Lin LY
	1999
会议名称	9th international symposium on nondestructive characterization of materials
会议日期	jun 28-jul 02, 1999
会议地点	sydney, australia
关键词	SEMIINSULATING GALLIUM-ARSENIDE CRYSTALS DEFECTS
页码	669-674
通讯作者	chen nf chinese acad sci lab semicond mat sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要	a semi-insulating (si) gaas single crystal ingot was successfully grown in a recoverable satellite. the two-dimensional distribution of stoichiometry in space-grown si-gaas single crystal wafer was studied nondestructively based upon x-ray band diffraction. the avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown si-gaas. the average etch pit density (epd) of dislocations in the crystal revealed by molten koh is 2.0 x 10(4) cm(-2), and the highest epd is 3.1 x 10(4) cm(-2). this result indicates that the structural properly of the crystal is quite good.
英文摘要	a semi-insulating (si) gaas single crystal ingot was successfully grown in a recoverable satellite. the two-dimensional distribution of stoichiometry in space-grown si-gaas single crystal wafer was studied nondestructively based upon x-ray band diffraction. the avenge stoichiometry in the space-grown crystal is 0.50007 with mean square deviation of 6 x 10(-6), and shows a better stoichiametric property than the ground-grown si-gaas. the average etch pit density (epd) of dislocations in the crystal revealed by molten koh is 2.0 x 10(4) cm(-2), and the highest epd is 3.1 x 10(4) cm(-2). this result indicates that the structural properly of the crystal is quite good.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:59z (gmt). no. of bitstreams: 0 previous issue date: 1999; amer soc nondestruct testing.; nasa, langley res ctr.; natl sci fdn.; usn, off res.; usa, res off far e.; usaf, asian off aerosp r&d.; usn, off res int field off asia.; chinese acad sci, lab semicond mat sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	amer soc nondestruct testing.; nasa, langley res ctr.; natl sci fdn.; usn, off res.; usa, res off far e.; usaf, asian off aerosp r&d.; usn, off res int field off asia.
会议录	nondestructive characterization of materials ix, 497
会议录出版者	amer inst physics ; 2 huntington quadrangle, ste 1no1, melville, ny 11747-4501 usa
会议录出版地	2 huntington quadrangle, ste 1no1, melville, ny 11747-4501 usa
学科主题	半导体材料
语种	英语
ISSN号	0094-243x
ISBN号	1-56396-911-4
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13757]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen NF,Zhong XG,Lin LY. Stoichiometry in GaAs grown in outer space measured nondestructively[C]. 见:9th international symposium on nondestructive characterization of materials. sydney, australia. jun 28-jul 02, 1999.