Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method

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	Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method
	Chen NF ; Wang YT ; He HJ ; Wang ZG ; Lin LY ; Oda O
刊名	applied physics letters
	1996
卷号	69 期号:25 页码:3890-3892
关键词	GAAS
ISSN号	0003-6951
通讯作者	chen nf chinese acad sciinst semicondlab semicond mat scibeijing 100083peoples r china.
中文摘要	the influences of microdefects and dislocations on the lattice parameters of undoped semi-insulating gaas single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi-insulating gaas was established in this letter. the comparison of this method with coulometric titration indicates that the method of nondestructive measurements is indeed convenient and reliable. (c) 1996 american institute of physics.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15315]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen NF,Wang YT,He HJ,et al. Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method[J]. applied physics letters,1996,69(25):3890-3892.
APA	Chen NF,Wang YT,He HJ,Wang ZG,Lin LY,&Oda O.(1996).Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method.applied physics letters,69(25),3890-3892.
MLA	Chen NF,et al."Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method".applied physics letters 69.25(1996):3890-3892.