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CORC

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Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling 期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8308, 页码: 83081y
Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin
收藏  |  浏览/下载：20/0  |  提交时间：2012/06/14
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载：38/3  |  提交时间：2011/07/05
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文
materials science in semiconductor processing, 2011
Hu, Qiang; Wei, Tongbo; Duan, Ruifei; Yang, Jiankun; Huo, Ziqiang; Zeng, Yiping; Xu, Shu
收藏  |  浏览/下载：30/0  |  提交时间：2012/06/14
Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers 期刊论文
japanese journal of applied physics, 2010, 卷号: 49, 期号: 10, 页码: art. no. 100201
Wei TB (Wei Tongbo); Wang JX (Wang Junxi); Liu NX (Liu Naixin); Lu HX (Lu Hongxi); Zeng YP (Zeng Yiping); Wang GH (Wang Guohong); Li JM (Li Jinmin)
收藏  |  浏览/下载：19/0  |  提交时间：2010/11/14
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载：40/0  |  提交时间：2010/03/09
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏  |  浏览/下载：65/25  |  提交时间：2010/03/08
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
The growth temperatures dependence of optical and electrical properties of InN films 期刊论文
science in china series g-physics mechanics & astronomy, 2008, 卷号: 51, 期号: 3, 页码: 237-242
Liu, B; Zhang, R; Xie, ZL; Xiu, XQ; Li, L; Kong, JY; Yu, HQ; Han, P; Gu, SL; Shi, Y; Zheng, YD; Tang, CG; Chen, YH; Wang, ZG
收藏  |  浏览/下载：48/2  |  提交时间：2010/03/08
The correlation between preferred orientation and performance of ITO thin films 期刊论文
journal of materials science-materials in electronics, 2007, 卷号: 18 suppl.1, 期号: 0, 页码: s411-s414
Chen Y (Chen Yao); Zhou YQ (Zhou Yuqin); Zhang QF (Zhang Qunfang); Zhu MF (Zhu Meifang); Liu FZ (Liu Fengzhen)
收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29

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