The correlation between preferred orientation and performance of ITO thin films
Chen Y (Chen Yao) ; Zhou YQ (Zhou Yuqin) ; Zhang QF (Zhang Qunfang) ; Zhu MF (Zhu Meifang) ; Liu FZ (Liu Fengzhen)
刊名journal of materials science-materials in electronics
2007
卷号18 suppl.1期号:0页码:s411-s414
关键词ELECTRICAL-PROPERTIES
ISSN号issn: 0957-4522
通讯作者zhou, yq, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: cy830101lcf@yahoo.com.cn ; yqzhou@gucas.ac.cn ; zhangqf@mails.gucas.ac.cn ; mfzhu@gucas.ac.cn ; liufz@gucas.ac.cn
中文摘要the tin-doped indium oxide (ito) thin films were prepared by reactive thermal evaporation on the glass substrates. the effects of substrate temperatures (t-s) on the grain preferred orientation, the electrical and optical properties of ito films were studied. x-ray diffraction (xrd) patterns indicated that the preferred orientation of film changes from (222) to (400) as t, > 200 degrees c. it can be explained by that the low-index crystallographic planes are easier to be formed when the adatoms have high surface mobility. the hall measurements indicated that both the concentration and mobility of carrier increase with increasing t,,,. the grain orientation of film does not influence the transmissivity and the carrier concentration, but enhances the carrier mobility. the transmissivity of ito films is over 90% in the visible wavelength region (except that of the film deposited at 125 degrees c). a minimum resistivity of 5 x 10-4 omega cm is achieved for the (400) preferred orientation film. thus, the highest figure of merit of 3.5 x 10(-2) square/omega is obtained for the film with (400) preferred orientation. the correlation between the preferred orientation and electrical and optical properties are discussed.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-29
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/9314]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Chen Y ,Zhou YQ ,Zhang QF ,et al. The correlation between preferred orientation and performance of ITO thin films[J]. journal of materials science-materials in electronics,2007,18 suppl.1(0):s411-s414.
APA Chen Y ,Zhou YQ ,Zhang QF ,Zhu MF ,&Liu FZ .(2007).The correlation between preferred orientation and performance of ITO thin films.journal of materials science-materials in electronics,18 suppl.1(0),s411-s414.
MLA Chen Y ,et al."The correlation between preferred orientation and performance of ITO thin films".journal of materials science-materials in electronics 18 suppl.1.0(2007):s411-s414.
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