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Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs 期刊论文
semiconductor science and technology, 2016, 卷号: 31, 期号: 12, 页码: 125003
Wei Li; Quan Wang; Xiangmi Zhan; Junda Yan; Lijuan Jiang; Haibo Yin; Jiamin Gong; Xiaoliang Wang; Fengqi Liu; Baiquan Li; Zhanguo Wang
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/10
Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
european physical journal-applied physics, 2014, 卷号: 66, 期号: 2, 页码: 20101
Qu, SQ; Wang, XL; Xiao, HL; Hou, X; Wang, CM; Jiang, LJ; Feng, C; Chen, H; Yin, HB; Peng, EC; Kang, H; Wang, ZG
收藏  |  浏览/下载：18/0  |  提交时间：2015/04/02
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载：96/7  |  提交时间：2011/07/05
Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703
作者:  Zhang Y;  Li YB
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：37/0  |  提交时间：2012/01/06
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi Y;  Lin DF;  Peng EC
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo); Zhang Y (Zhang Yang); Zeng YP (Zeng Yiping)
收藏  |  浏览/下载：214/46  |  提交时间：2010/10/11
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：74/2  |  提交时间：2010/03/08
HEMT  2DEG  
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：130/30  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：98/1  |  提交时间：2010/03/08

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