Self-consistent analysis of AlSb/InAs high electron mobility transistor structures

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中科院半导体材料科学重点实验室

	Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
	Li YB (Li Yanbo) ; Zhang Y (Zhang Yang) ; Zeng YP (Zeng Yiping)
刊名	journal of applied physics
	2010
卷号	108 期号:4 页码:art. no. 044504
关键词	INAS/ALSB QUANTUM-WELLS LOW-POWER APPLICATIONS HEMTS MODULATION HETEROSTRUCTURES TECHNOLOGY CHANNEL VOLTAGE MASS
通讯作者	li, yb, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail address: nkybli@163.com ; ypzeng@semi.ac.cn
合作状况	其它
英文摘要	the influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the alsb/inas high electron mobility transistors (hemts) have been studied based on the self-consistent calculation of the schrodinger and poisson equations with both the strain and nonparabolicity effects being taken into account. the results show that, having little influence on the total two dimensional electron gas (2deg) concentration in the channel, the hemt's channel layer width has some influence on the electron mobility, with a channel as narrow as 100-130 angstrom being more beneficial. for the alsb/inas hemt with a te delta-doped layer, the 2deg concentration as high as 9.1 x 10(12) cm(-2) can be achieved in the channel by enhancing the delta-doping concentration without the occurrence of the parallel conduction. when utilizing a si delta-doped inas layer as the electron-supplying layer of the alsb/inas hemt, the effect of the inas donor layer thickness is studied on the 2deg concentration. to obtain a higher 2deg concentration in the channel, it is necessary to use an inas donor layer as thin as 4 monolayer. to test the validity of our calculation, we have compared our theoretical results (2deg concentration and its distribution in different sub-bands of the channel) with the experimental ones done by other groups and show that our theoretical calculation is consistent with the experimental results.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-10-11t05:38:36z no. of bitstreams: 1 self-consistent analysis of alsb-inas high electron mobility transistor structures.pdf: 877176 bytes, checksum: c4193f716f9f6bb447976ffbc58a656d (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-10-11t06:01:19z (gmt) no. of bitstreams: 1 self-consistent analysis of alsb-inas high electron mobility transistor structures.pdf: 877176 bytes, checksum: c4193f716f9f6bb447976ffbc58a656d (md5); made available in dspace on 2010-10-11t06:01:19z (gmt). no. of bitstreams: 1 self-consistent analysis of alsb-inas high electron mobility transistor structures.pdf: 877176 bytes, checksum: c4193f716f9f6bb447976ffbc58a656d (md5) previous issue date: 2010; this work was supported by the knowledge innovation program of the chinese academy of sciences under grant no. iscas2009t04. the authors also wish to acknowledge associate professor l. j. cui and j. wu for fruitful discussions and continuous encouragement throughout this work; 其它
学科主题	半导体材料
收录类别	SCI
资助信息	this work was supported by the knowledge innovation program of the chinese academy of sciences under grant no. iscas2009t04. the authors also wish to acknowledge associate professor l. j. cui and j. wu for fruitful discussions and continuous encouragement throughout this work
语种	英语
公开日期	2010-10-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13545]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Li YB ,Zhang Y ,Zeng YP . Self-consistent analysis of AlSb/InAs high electron mobility transistor structures[J]. journal of applied physics,2010,108(4):art. no. 044504.
APA	Li YB ,Zhang Y ,&Zeng YP .(2010).Self-consistent analysis of AlSb/InAs high electron mobility transistor structures.journal of applied physics,108(4),art. no. 044504.
MLA	Li YB ,et al."Self-consistent analysis of AlSb/InAs high electron mobility transistor structures".journal of applied physics 108.4(2010):art. no. 044504.