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科研机构
半导体研究所 [9]
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会议论文 [9]
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2009 [1]
2006 [2]
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半导体材料 [9]
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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
收藏
  |  
浏览/下载:122/30
  |  
提交时间:2010/03/29
HIGH BREAKDOWN VOLTAGE
MOBILITY TRANSISTORS
HETEROSTRUCTURES
SAPPHIRE
GANHEMTS
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:102/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy
会议论文
6th international conference on solid-state and integrated-circuit technology, shanghai, peoples r china, oct 22-25, 2001
Lu LW
;
Ge WK
;
Sou IK
;
Wang J
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/10/29
ZNSTE
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers
会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Chen LH
;
Xu ZT
;
Ma XY
;
Zhang JM
;
Yang GW
;
Xu JY
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
high power
Al-free laser
communication
EPITAXY
The influence of oxygen content on photoluminescence from Er-doped SiOx
会议论文
symposium e on luminescent materials at the 1999 mrs spring meeting, san francisco, ca, apr 05-08, 1999
Chen WD
;
Liang JJ
;
Hsu CC
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2010/10/29
Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD
会议论文
2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998
Wang LS
;
Yue GZ
;
Liu XL
;
Wang XH
;
Wang CX
;
Wang D
;
Lu DC
;
Wang ZG
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/10/29
METASTABILITY
ANTISITE
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