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科研机构
半导体研究所 [27]
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会议论文 [27]
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2008 [1]
2007 [1]
2006 [7]
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半导体材料 [27]
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学科主题:半导体材料
内容类型:会议论文
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AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
Reliable concentrated photovoltaic system with compound concentrator
会议论文
solar world congress of the international-solar-energy-society, beijing, peoples r china, sep 18-21, 2007
作者:
Huang TM
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/09
SOLAR-CELLS
The improvement of thick oxidized porous silicon layer growth process - art. no. 60290S
会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Li J
;
An JM
;
Wang HJ
;
Xia JL
;
Gao DS
;
Hu XW
收藏
  |  
浏览/下载:176/36
  |  
提交时间:2010/03/29
porous silicon
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
会议论文
21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005
Hu ZH (Hu Zhihua)
;
Liao XB (Liao Xianbo)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
收藏
  |  
浏览/下载:520/27
  |  
提交时间:2010/03/29
silicon
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Terahertz pulse generation with LT-GaAs photoconductive antenna
会议论文
joint 31st international conference on infrared and millimeter waves/14th international conference on terahertz electronics, shanghai, peoples r china, sep 18-22, 2006
Cui, LJ (Cui, L. J.)
;
Zeng, YP (Zeng, Y. P.)
;
Zhao, GZ (Zhao, G. Z.)
收藏
  |  
浏览/下载:160/48
  |  
提交时间:2010/03/29
TEMPERATURE-GROWN GAAS
CARRIER DYNAMICS
EMISSION
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
收藏
  |  
浏览/下载:95/18
  |  
提交时间:2010/03/29
ZnO
MOCVD
thermal annealing
photoluminescence
x-ray diffraction
atomic force microscopy
PULSED-LASER DEPOSITION
THIN-FILMS
PHOTOLUMINESCENCE
MECHANISMS
EPITAXY
CVD
SI
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures
会议论文
2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004
作者:
Ye XL
;
Jin P
;
Xu B
收藏
  |  
浏览/下载:119/42
  |  
提交时间:2010/03/29
lateral intersubband photocurrent
Electron irradiation-induced defects in InP pre-annealed at high temperature
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Zhao, YW (Zhao, Y. W.)
;
Dong, ZY (Dong, Z. Y.)
;
Deng, AH (Deng, A. H.)
收藏
  |  
浏览/下载:158/28
  |  
提交时间:2010/03/29
indium phosphide
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Sun, GS
;
Ning, J
;
Zhang, YX
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:206/60
  |  
提交时间:2010/03/29
4H-SiC
LPCVD homoepitaxial growth
thermal oxidization
MOS structures
HOT-WALL CVD
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