QQ客服 官方微博 反馈留言

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2018    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2 期刊论文 IEEE Electron Device Letters, 2018 作者:  Yuanjie Lv;  Xingye zhou;  shibing Long;  Xubo Song;  Yuangang Wang 收藏  |  浏览/下载：50/0  |  提交时间：2019/04/18 Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications 期刊论文 IEEE Transactions on Power Electronics, 2018 作者:  Qi, Jinwei;  Yang, Xu;  Li, Xin;  Tian, Kai;  Mao, Zhangsong 收藏  |  浏览/下载：10/0  |  提交时间：2019/11/19 Cryogenic temperatures  Dynamic resistance  High-efficiency power conversions  High-frequency applications  Power conversion systems  SiC MOSFET  Switching characterization  Temperature applications   Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications 期刊论文 ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900 作者:  Zhu, Tianhua;  Zhuo, Fang 收藏  |  浏览/下载：16/0  |  提交时间：2019/11/19 high-current applications  wire bonding  power density  avalanche-suppressed method  gallium compounds  GaN  integral package  lead bonding  single gate driver  field effect transistor switches  MOSFET  DHEMT integrated cascode switch  high electron mobility transistors  paralleled depletion-mode high-electron-mobility transistors  wide band gap semiconductors  cascode transistors  silicon-MOSFET  Si  potential unbalanced current sharing  cost reduction  optimised symmetric configuration  high-current cascode gallium nitride switch  III-V semiconductors  semiconductor device packaging   High Dynamic Performance Solar Array Simulator Based on a SiC MOSFET Linear Power Stage 期刊论文 IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 卷号: 33, 页码: 1682-1695 作者:  Jin, Shanshan[1];  Zhang, Donglai[1];  Bao, Zhiyun[2];  Liu, Xinjun[3] 收藏  |  浏览/下载：12/0  |  提交时间：2019/04/22 Current-voltage characteristics  high dynamic performance  SiC MOSFET transistor  renewable energy sources  voltage-controlled linear current source   An Integrated Gate Driver with Active Delay Control Method for Series Connected SiC MOSFETs 期刊论文 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics, COMPEL 2018, 2018 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Hao, Quanrui;  Li, Kejun 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/11 delay control  series connected  SiC MOSFET  voltage balance   An Optimized Any-Cell-to-Any-Cell Equalizer Based on Coupled Half-bridge Converters for Series-Connected Battery Strings 期刊论文 IEEE Transactions on Power Electronics, 2018 作者:  Shang Y.;  Cui N.;  Zhang C. 收藏  |  浏览/下载：13/0  |  提交时间：2019/12/11 Batteries  Computer architecture  electric vehicles  Equalizers  equalizers  half-bridge converters  Inductors  Li-ion batteries  Microprocessors  MOSFET  multi-winding transformers  Windings   Design of high-disturbance driver system for SiC high-power module 期刊论文 IFAC PAPERSONLINE, 2018, 卷号: 51, 期号: 31, 页码: 690-693 作者:  Zhu, Liangtao;  Wang, Tao;  Song, Jinqiu;  Li, Bin;  Zhang, Jianguo 收藏  |  浏览/下载：14/0  |  提交时间：2019/12/11 MOSFET  SiC Power module  Anti-interference  Driver system   An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level 期刊论文 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018, 2018, 页码: 3383-3389 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Chen, Yufeng;  Zhang, Lei 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 equivalent model  series connected  SiC MOSFET   A Gate Driver of SiC MOSFET for Suppressing the Negative Voltage Spikes in a Bridge Circuit 期刊论文 IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 卷号: 33, 期号: 3, 页码: 2339-2353 作者:  Gao, Feng;  Zhou, Qi;  Wang, Panrui;  Zhang, Chenghui 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11 Auxiliary transistor  bridge configuration  gate driver  SiC MOSFET   Characterization and Detailed Analysis of the Crosstalk with SiC MOSFET 期刊论文 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, 2018, 页码: 239-243 作者:  Jing, Yang;  Gao, Feng;  Li, Huadong;  Chen, Suhong 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11 crosstalk  reverse recovery characteristic  SiC  synchronous MOSFET