| Characterization and Detailed Analysis of the Crosstalk with SiC MOSFET | |
| Jing, Yang; Gao, Feng; Li, Huadong; Chen, Suhong | |
| 刊名 | 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
 |
| 2018 | |
| 页码 | 239-243 |
| 关键词 | crosstalk reverse recovery characteristic SiC synchronous MOSFET |
| DOI | 10.1109/WiPDAAsia.2018.8734655 |
| 会议名称 | 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 |
| URL标识 | 查看原文 |
| 会议日期 | 16 May 2018 through 18 May 2018 |
| 公开日期 | [db:dc_date_available] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4579166 |
| 专题 | 山东大学 |
| 作者单位 | 1.School of Electrical Engineering, Shandong University, Jinan, Shandong, China 2.State Grid Shandon |
| 推荐引用方式 GB/T 7714 | Jing, Yang,Gao, Feng,Li, Huadong,et al. Characterization and Detailed Analysis of the Crosstalk with SiC MOSFET[J]. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018,2018:239-243. |
| APA | Jing, Yang,Gao, Feng,Li, Huadong,&Chen, Suhong.(2018).Characterization and Detailed Analysis of the Crosstalk with SiC MOSFET.2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018,239-243. |
| MLA | Jing, Yang,et al."Characterization and Detailed Analysis of the Crosstalk with SiC MOSFET".2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 (2018):239-243. |
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