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	An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level
	Wang, Panrui; Gao, Feng; Jing, Yang; Chen, Yufeng; Zhang, Lei
刊名	2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
	2018
页码	3383-3389
关键词	equivalent model series connected SiC MOSFET
DOI	10.23919/IPEC.2018.8507617
会议名称	8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
URL标识	查看原文
会议日期	20 May 2018 through 24 May 2018
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4574671
专题	山东大学
作者单位	1.School of Electrical Engineering, Shandong University, Jinan, China 2.State Grid Shan
推荐引用方式 GB/T 7714	Wang, Panrui,Gao, Feng,Jing, Yang,et al. An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level[J]. 2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018,2018:3383-3389.
APA	Wang, Panrui,Gao, Feng,Jing, Yang,Chen, Yufeng,&Zhang, Lei.(2018).An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level.2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018,3383-3389.
MLA	Wang, Panrui,et al."An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level".2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 (2018):3383-3389.

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