QQ客服 官方微博 反馈留言

浏览/检索结果: 共9条，第1-9条 帮助 限定条件 发表日期：2018    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Research on Radiation-Induced Threshold Voltage Shifts in Power MOSFET Based on Charge-Pumping Method 会议论文 作者:  Ding Y(丁艳);  Wang LX(王立新);  Zhang YF(张彦飞);  Liu MX(刘梦新) 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/13 Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module 会议论文 作者:  Wang, Jun;  Burgos, Rolando;  Boroyevich, Dushan;  Liu, Zeng 收藏  |  浏览/下载：10/0  |  提交时间：2019/11/26 switching-cycle control  smart gate driver  digital control system  Power electronics building block  SiC MOSFET   Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module 会议论文 作者:  Wang, Jun;  Burgos, Rolando;  Boroyevich, Dushan;  Liu, Zeng 收藏  |  浏览/下载：4/0  |  提交时间：2019/11/26 Auxiliary power supply  Design considerations  Gate drivers  H bridge circuits  Modular converters  Power Electronics Building Blocks  Si-CMOS  Switching cycles   IGCT Circuit Model Based on Pspice Modeling Platform 会议论文 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01 作者:  Song, Yang;  Wang, Cailin 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/20 IGCT  SiC power MOSFET model  hard-driven  circuit model  Pspice modeling platfirm   The Security Protection of SiC MOSFET NPC Tri-level Converter 会议论文 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01 作者:  Wu, Wenjun;  Cai, Yuxi;  Wang, Wenxuan;  Cui, Dongjie 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/20 SiC MOSFET  drain-source voltage  over-current protection  tri-level  voltage balanced  leakage current   Digital Control of Hybrid Full Bridge Three-level LLC Resonant Converter Based on SiC MOSFET 会议论文 2018 IEEE INTERNATIONAL POWER ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC), 2018-01-01 作者:  Guo, Ying;  Yang, Zhiqiang;  Yin, Youwei;  Cao, Hui 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20 EV-charger  Gain analysis  three-level converter  LLC Resonant  Digital Control  SiC-MOS   Characterization and Detailed Analysis of The Crosstalk With SiC MOSFET 会议论文 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), MAY 16-18, 2018 作者:  Jing Yang;  Gao Feng;  Li Huadong;  Chen Suhong 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 SiC  crosstalk  synchronous MOSFET  reverse recovery characteristic   An Integrated Gate Driver with Active Delay Control Method for Series Connected SiC MOSFETs 会议论文 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL), JUN 25-28, 2018 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Hao, Quanrui;  Li, Kejun 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/31 SiC MOSFET  series connected  voltage balance  delay control   An Insight into the Voltage Rising Behavior during Turn-off Process of Series Connected SiC MOSFETs on Circuit Level 会议论文 8th International Power Electronics Conference (IPEC-Niigata ECCE Asia), MAY 20-24, 2018 作者:  Wang, Panrui;  Gao, Feng;  Jing, Yang;  Chen, Yufeng;  Zhang, Lei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 equivalent model  series connected  SiC MOSFET