| Characterization and Detailed Analysis of The Crosstalk With SiC MOSFET | |
| Jing Yang; Gao Feng; Li Huadong; Chen Suhong | |
| 2018 | |
| 会议名称 | 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) |
| 会议日期 | MAY 16-18, 2018 |
| 关键词 | SiC crosstalk synchronous MOSFET reverse recovery characteristic |
| 页码 | 239-243 |
| 收录类别 | CPCI-S |
| 会议录 | 2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA)
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/6026839 |
| 专题 | 山东大学 |
| 作者单位 | 1.Shandong Univ, Sch Elect Engn, Jinan, Shandong, Peoples R China. 2.State Grid Shandong Elect Power Re |
| 推荐引用方式 GB/T 7714 | Jing Yang,Gao Feng,Li Huadong,et al. Characterization and Detailed Analysis of The Crosstalk With SiC MOSFET[C]. 见:1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia). MAY 16-18, 2018. |
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