QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2017     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 On the Physical Modeling of Random Telegraph Noise (RTN) Amplitude in Nanoscale MOSFETs: From Ideal to Statistical Devices 其他 2017-01-01 Zhang, Zexuan; Guo, Shaofeng; Zhang, Zhe; Wang, Runsheng; Huang, Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps 期刊论文 SCIENTIFIC REPORTS, 2017 Guo, Shaofeng; Wang, Runsheng; Mao, Dongyuan; Wang, Yangyuan; Huang, Ru 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 DEFECTS  SIGNALS   Experimental Investigation of Ballistic Carrier Transport for Sub-100-nm Ge n-MOSFETs 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Cheng, Ran; Yin, Longxiang; Wu, Heng; Yu, Xiao; Zhang, Yanyan; Zheng, Zejie; Wu, Wangran; Chen, Bing; Ye, Peide D.; Liu, Xiaoyan; Zhao, Yi 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Germanium MOSFETs  ballistic transport  pulsed IV  GeOI  self-heating effect  P-CHANNEL   Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition 期刊论文 NANOSCALE RESEARCH LETTERS, 2017, 卷号: 12, 页码: - 作者:  Yang, LF;  Wang, T;  Zou, Y;  Lu, HL 收藏  |  浏览/下载：17/0  |  提交时间：2017/12/08 Band Alignments  Hfalo Dielectric  Inp  Atomic Layer Deposition