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浏览/检索结果: 共2条，第1-2条 帮助 限定条件 发表日期：2011    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Thermal stability of Cu/Si (111) films prepared by ionized cluster beam technique 会议论文 2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011, Sanya, China, July 29, 2011 - July 31, 2011 作者:  Cao, Bo;  Jia, Yanhui;  Li, Gongping;  Cho, Seong Jin;  Kim, Hee 收藏  |  浏览/下载：3/0  |  提交时间：2017/01/20 Film preparation  Annealing  Backscattering  Copper  Diffraction  Diffusion  Ionization  Ions  Metallic films  Rutherford backscattering spectroscopy  Silicides  Silicon  Spectrometry  Thermodynamic stability  X ray diffraction  Annealing temperatures  Atomic diffusions  Cu films  Interface reaction  Interface reactions  Ionized cluster beam (ICB)  Ionized cluster beams  P-type Si  Rutherford backscattering spectrometry  Rutherford backscattering spectrometry (RBS)  Si atoms  Si substrates  Thermally stable  X-ray diffraction (XRD)  XRD   The diffusion and interfacial reaction of Cu/Si(100) systems 会议论文 International Conference on Advanced Engineering Materials and Technology (AEMT2011)International Conference on Civil Engineering and Building Materials (CEBM 2011), Sanya, PEOPLES R CHINAKunming, PEOPLES R CHINA, JUL 29-31, 2011JUL 29-31, 2011 作者:  Gao, XX;  Jia, YH;  Li, GP;  Ma, JP;  Wang, YB 收藏  |  浏览/下载：2/0  |  提交时间：2017/01/20 Diffusion  Interface reaction  Annealing