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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2009    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Structure, magnetization, and low-temperature spin dynamic behavior of zincblende mn-rich mn(ga)as nanoclusters embedded in gaas 期刊论文 Journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: 6 作者:  Wang, W. Z.;  Deng, J. J.;  Lu, J.;  Sun, B. Q.;  Wu, X. G. 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Annealing  Curie temperature  Ferromagnetic materials  Gallium arsenide  Iii-v semiconductors  Magnetic susceptibility  Magnetisation  Manganese compounds  Nanofabrication  Nanostructured materials  Rkky interaction  Semiconductor thin films  Semimagnetic semiconductors  Spin dynamics   Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912 Wang WZ; Deng JJ; Lu J; Sun BQ; Wu XG; Zhao JH 收藏  |  浏览/下载：217/74  |  提交时间：2010/03/08 annealing  Curie temperature  ferromagnetic materials  gallium arsenide  III-V semiconductors  magnetic susceptibility  magnetisation  manganese compounds  nanofabrication  nanostructured materials  RKKY interaction  semiconductor thin films  semimagnetic semiconductors  spin dynamics   Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009) 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901 作者:  Wei HY;  Song HP;  Jiao CM 收藏  |  浏览/下载：380/108  |  提交时间：2010/03/08 aluminium compounds  core levels  III-V semiconductors  magnesium compounds  semiconductor heterojunctions  semiconductor-insulator boundaries  X-ray photoelectron spectra   Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712 作者:  Song HP;  Zhang B 收藏  |  浏览/下载：32/0  |  提交时间：2010/04/04 aluminium compounds  effective mass  gallium arsenide  III-V semiconductors  SCF calculations  semiconductor quantum wires  spectral line shift  EXCHANGE INTERACTION  ENERGY  STATES  ABSORPTION  NANOWIRES  ELECTRONS  SUBBANDS  WELLS  FIELD   Measuring spin diffusion of electrons in bulk n-GaAs using circularly dichromatic absorption difference spectroscopy of spin gratings 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 20, 页码: art. no. 202109 Yu HL; Zhang XM; Wang PF; Ni HQ; Niu ZC; Lai TS 收藏  |  浏览/下载：54/4  |  提交时间：2010/03/08 circular dichroism  diffraction gratings  diffusion  gallium arsenide  homodyne detection  III-V semiconductors  spin dynamics  spin polarised transport   Lattice polarity detection of InN by circular photogalvanic effect 期刊论文 applied physics letters, 2009, 卷号: 95, 期号: 3, 页码: art. no. 031902 Zhang Q; Wang XQ; He XW; Yin CM; Xu FJ; Shen B; Chen YH; Wang ZG; Ishitani Y; Yoshikawa A 收藏  |  浏览/下载：68/0  |  提交时间：2010/03/08 III-V semiconductors  indium compounds  nondestructive testing  photoconductivity  radiation effects  semiconductor thin films  wide band gap semiconductors   Electron spin quantum beats and room temperature g factor in GaAsN 期刊论文 applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041911 Zhao HM; Lombez L; Liu BL; Sun BQ; Xue QK; Chen DM; Marie X 收藏  |  浏览/下载：61/2  |  提交时间：2010/03/08 electron spin polarisation  gallium arsenide  g-factor  high-speed optical techniques  III-V semiconductors  semiconductor thin films  Zeeman effect   Fine structural splitting and exciton spin relaxation in single InAs quantum dots 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103516 Dou XM; Sun BQ; Xiong YH; Niu ZC; Ni HQ; Xu ZY 收藏  |  浏览/下载：101/0  |  提交时间：2010/03/08 deformation  excitons  fine structure  III-V semiconductors  indium compounds  phonons  photoluminescence  semiconductor quantum dots  spin dynamics   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：83/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：313/47  |  提交时间：2010/03/08 conduction bands  III-V semiconductors  II-VI semiconductors  indium compounds  interface states  polarisation  semiconductor heterojunctions  valence bands  wide band gap semiconductors  X-ray photoelectron spectra  zinc compounds