Electron spin quantum beats and room temperature g factor in GaAsN

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	Electron spin quantum beats and room temperature g factor in GaAsN
	Zhao HM ; Lombez L ; Liu BL ; Sun BQ ; Xue QK ; Chen DM ; Marie X
刊名	applied physics letters
	2009
卷号	95 期号:4 页码:art. no. 041911
关键词	electron spin polarisation gallium arsenide g-factor high-speed optical techniques III-V semiconductors semiconductor thin films Zeeman effect
ISSN号	0003-6951
通讯作者	zhao hm chinese acad sci inst phys beijing natl lab condensed matter phys pob 603 beijing 100080 peoples r china. e-mail address: blliu@aphy.iphy.ac.cn ; marie@insa-toulouse.fr
中文摘要	we report on the investigation of electron spin quantum beats at room temperature in gaasn thin films by time-resolved kerr rotation technique. the measurement of the quantum beats, which originate from the larmor precession of electron spins in external transverse magnetic field, yields an accurate determination of the conduction electron g factor. we show that the g factor of gaas1-xnx thin films is significantly changed by the introduction of a small nitrogen fraction.
学科主题	半导体物理
收录类别	SCI
资助信息	chinese-french pra national science foundation of china pra mx06-07 1053403010774183national basic research program of china 2006cb921300973 we acknowledge the financial support of this work from the chinese-french pra. project no. pra mx06-07 from national science foundation of china (grant nos. 10534030 and 10774183) and from national basic research program of china (grant no. 2006cb921300973)
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7061]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao HM,Lombez L,Liu BL,et al. Electron spin quantum beats and room temperature g factor in GaAsN[J]. applied physics letters,2009,95(4):art. no. 041911.
APA	Zhao HM.,Lombez L.,Liu BL.,Sun BQ.,Xue QK.,...&Marie X.(2009).Electron spin quantum beats and room temperature g factor in GaAsN.applied physics letters,95(4),art. no. 041911.
MLA	Zhao HM,et al."Electron spin quantum beats and room temperature g factor in GaAsN".applied physics letters 95.4(2009):art. no. 041911.