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浏览/检索结果: 共15条，第1-10条 帮助 限定条件 发表日期：2006    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 7, 页码: art.no.071903 作者:  Jin P 收藏  |  浏览/下载：549/12  |  提交时间：2010/04/11 GROWTH  INAS  GAAS  SURFACES   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 anodic alumina films   Investigation of Mn-doped Si films prepared by magnetron cosputtering 期刊论文 journal of crystal growth, 2006, 卷号: 291, 期号: 1, 页码: 239-242 作者:  Yin ZG 收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11 Mn doping  magnetron sputtering  MnxSi1-x  diluted magnetic  THIN-FILMS  SPIN-PHOTONICS  SEMICONDUCTORS  GROWTH  FERROMAGNETISM  SPINTRONICS   Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18 Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 MOCVD  GaN  resistivity  TSC  N-TYPE GAN  DOPED GAN  SPECTROSCOPY  CARBON  FE   Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 31, 期号: 1, 页码: 43-47 作者:  Jin P;  Xu B 收藏  |  浏览/下载：82/0  |  提交时间：2010/04/11 patterned substrate  GaAs  molecular beam epitaxy  nucleation positions  ASSEMBLED QUANTUM DOTS  MOLECULAR-BEAM EPITAXY  GE ISLANDS  GROWTH  SURFACE  ARRAYS   1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 期刊论文 thin solid films, 2006, 卷号: 508, 期号: 1-2, 页码: 396-398 Yu J; Kasper E; Oehme M 收藏  |  浏览/下载：63/0  |  提交时间：2010/04/11 SiGe  photodiode  MBE  quantum dots  PHOTODETECTORS  OPERATION   Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：101/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文 半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525 作者:  Xiao Hongling;  Wang Cuimei 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23 Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文 3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005 Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM 收藏  |  浏览/下载：203/36  |  提交时间：2010/03/29 MOCVD   Influence of dislocation stress field on distribution of quantum dots 期刊论文 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133 作者:  Xu B 收藏  |  浏览/下载：56/0  |  提交时间：2010/04/11 stress  surface structure  semiconducting III-V materials  MOLECULAR-BEAM EPITAXY  STRAIN  THICKNESS