Investigation of Mn-doped Si films prepared by magnetron cosputtering

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	Investigation of Mn-doped Si films prepared by magnetron cosputtering
	Yin ZG
刊名	journal of crystal growth
	2006
卷号	291 期号:1 页码:239-242
关键词	Mn doping magnetron sputtering MnxSi1-x diluted magnetic THIN-FILMS SPIN-PHOTONICS SEMICONDUCTORS GROWTH FERROMAGNETISM SPINTRONICS
ISSN号	0022-0248
通讯作者	liu, lf, peking univ, inst microelect, beijing 100871, peoples r china. e-mail: lfliu@ime.pku.edu.cn
中文摘要	mn-doped si films were prepared on si(001) substrates by magnetron cosputtering and post-annealing process. the structural, morphological and magnetic properties of the films have been investigated. x-ray diffraction results show that the as-prepared film is amorphous. by annealing at 800 degrees c, however, the film is crystallized. there is no secondary phase found except si in the two films. chemical mapping shows that no segregation of the mn atoms appears in the annealed film. atomic force microscopy images of the films indicate that the annealed film has a granular feature that covers uniformly the film surface while there is no such kind of characteristic in the as-prepared film. the field dependence of magnetization was measured using an alternating gradient magnetometer, and it has been indicated that the annealed film shows room-temperature ferromagnetism. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10620]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yin ZG. Investigation of Mn-doped Si films prepared by magnetron cosputtering[J]. journal of crystal growth,2006,291(1):239-242.
APA	Yin ZG.(2006).Investigation of Mn-doped Si films prepared by magnetron cosputtering.journal of crystal growth,291(1),239-242.
MLA	Yin ZG."Investigation of Mn-doped Si films prepared by magnetron cosputtering".journal of crystal growth 291.1(2006):239-242.