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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2002     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy 外文期刊 2002 作者:  Wang, Z;  Sun, DL;  Hu, JF;  Cui, DL;  Xu, XH 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/26 Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文 10th international meeting on ferroelectricity (imf-10), madrid, spain, sep 03-07, 2001 Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ 收藏  |  浏览/下载：22/0  |  提交时间：2010/11/15 Bi2Ti2O7  thin film  MOCVD  (111) orientation  CHEMICAL-VAPOR-DEPOSITION  CRYSTAL THIN-FILMS   Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 期刊论文 ferroelectrics, 2002, 卷号: 271, 期号: 0, 页码: 1707-1713 Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ 收藏  |  浏览/下载：80/0  |  提交时间：2010/08/12 Bi2Ti2O7  thin film  MOCVD  (111) orientation  CHEMICAL-VAPOR-DEPOSITION  CRYSTAL THIN-FILMS   Dielectric properties of bi2ti2o7 films grown on si(100) substrate by apmocvd 期刊论文 Ferroelectrics, 2002, 卷号: 271, 页码: 1707-1713 作者:  Wang, H;  Shang, SX;  Yao, WF;  Hou, Y;  Xu, XH 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Bi2ti2o7  Thin film  Mocvd  (111) orientation   Insulating properties of rapid thermally processed Bi2Ti2O7 thin films by a chemical solution decomposition technique 期刊论文 MATERIALS RESEARCH BULLETIN, 2002, 卷号: 37, 期号: 10, 页码: 1691-1697 作者:  Wang, SW;  Lu, W;  Li, N;  Li, ZF;  Wang, H 收藏  |  浏览/下载：2/0  |  提交时间：2020/01/14 thin films  sol-gel chemistry  dielectric properties   Erratum: The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy (Journal of Crystal Growth (2001) 235 (411-414) PII: S0022024801019236) 期刊论文 Journal of Crystal Growth, 2002, 卷号: 240, 期号: 43163 作者:  Wang Z.;  Sun D.;  Hu J.;  Cui D.;  Xu X. 收藏  |  浏览/下载：2/0  |  提交时间：2020/01/14 Erratum: The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy (Journal of Crystal Growth (2001) 235 (411-414) PII: S0022024801019236) 期刊论文 Journal of Crystal Growth, 2002, 卷号: 240, 期号: 3-4, 页码: 611 作者:  Wang, Zhuo;  Sun, Daliang;  Hu, Jifan;  Cui, Deliang;  Xu, Xiaohong 收藏  |  浏览/下载：2/0  |  提交时间：2020/01/14 The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy (vol 235, pg 411, 2001) 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 240, 期号: 3-4, 页码: 611-611 作者:  Wang, Z;  Sun, DL;  Hu, JF;  Cui, DL;  Xu, XH 收藏  |  浏览/下载：1/0  |  提交时间：2020/01/14 The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 235, 期号: 1-4, 页码: 411-414 作者:  Wang, Z;  Sun, DL;  Hu, JF;  Cui, DL;  Xu, XH 收藏  |  浏览/下载：1/0  |  提交时间：2020/01/14 atomic force microscopy  reactive ion etching  metallorganic chemical  vapor deposition   Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD 会议论文 10th International Meeting on Ferroelectricity (IMF-10), SEP 03-07, 2001 作者:  Wang, H;  Shang, SX;  Yao, WF;  Hou, Y;  Xu, XH 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 Bi2Ti2O7  thin film  MOCVD  (111) orientation