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	Erratum: The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy (Journal of Crystal Growth (2001) 235 (411-414) PII: S0022024801019236)
	Wang Z.; Sun D.; Hu J.; Cui D.; Xu X.; Wang D.; Zhang Y.; Wang M.; 等 更多
刊名	Journal of Crystal Growth
	2002
卷号	240期号:43163
DOI	10.1016/S0022-0248(02)00939-9
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6779111
专题	山东大学
作者单位	1.Shandong University, State Key Laboratory of Crystal Materials, 250100 Jinan, China 2.Shandong University, State Key Laboratory of C
推荐引用方式 GB/T 7714	Wang Z.,Sun D.,Hu J.,et al. Erratum: The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy (Journal of Crystal Growth (2001) 235 (411-414) PII: S0022024801019236)[J]. Journal of Crystal Growth,2002,240(43163).
APA	Wang Z..,Sun D..,Hu J..,Cui D..,Xu X..,...&等 更多.(2002).Erratum: The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy (Journal of Crystal Growth (2001) 235 (411-414) PII: S0022024801019236).Journal of Crystal Growth,240(43163).
MLA	Wang Z.,et al."Erratum: The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy (Journal of Crystal Growth (2001) 235 (411-414) PII: S0022024801019236)".Journal of Crystal Growth 240.43163(2002).

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