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	The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy
	Wang, Z; Sun, DL; Hu, JF; Cui, DL; Xu, XH; Wang, D; Zhang, Y; Wang, M; Wang, H; Chen, HC
刊名	JOURNAL OF CRYSTAL GROWTH
	2002
卷号	235期号:1-4页码:411-414
关键词	atomic force microscopy reactive ion etching metallorganic chemical vapor deposition
DOI	10.1016/S0022-0248(01)01923-6
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6779153
专题	山东大学
作者单位	Shandong
推荐引用方式 GB/T 7714	Wang, Z,Sun, DL,Hu, JF,et al. The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy[J]. JOURNAL OF CRYSTAL GROWTH,2002,235(1-4):411-414.
APA	Wang, Z.,Sun, DL.,Hu, JF.,Cui, DL.,Xu, XH.,...&Wei, K.(2002).The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy.JOURNAL OF CRYSTAL GROWTH,235(1-4),411-414.
MLA	Wang, Z,et al."The reactive ion etching of Bi2Ti2O7 thin films on silicon substrates and its image in atomic force microscopy".JOURNAL OF CRYSTAL GROWTH 235.1-4(2002):411-414.

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