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	半導体レーザ素子の製造方法
	的場 昭大; 大柴 小枝子; 小川 洋; 川井 義雄
	1994-01-26
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1994007640B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ素子の製造方法
英文摘要	PURPOSE:To form a structure, in which a plurality of resonators are arranged in series on the same foundation layer, and to oscillate the title element at a single axial mode by forming striped first and second grooves mutually crossing at right angles extending over the foundation layer from the surface of a current constriction layer. CONSTITUTION:A P-type InP layer 32 is shaped onto the (100) face of an N-type InP substrate 31 through a liquid-phase epitaxial growth method. An etching mask 51 with a window 51a from which the semiconductor layer 32 is exposed is formed to a striped shape in order to form a first groove 35 in the direction and to a striped shape in order to forma second groove 37 in the direction orthogonal to the stripe through a photolithographic technique. The first groove 35 and the second groove 37 reaching the substrate 31 are shaped simultaneously through etching. An N-type InP lower clad layer 39, a P-type InGaAsP active layer 41 and a P-type InP upper clad layer 43 are formed onto the first groove 35, the second groove 37 and a current constriction layer 33 through the liquid-phase epitaxial growth method. InP does not grow in the first groove 35, an inner surface thereof is shaped in a (111)A face, at that time.
公开日期	1994-01-26
申请日期	1986-01-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74960]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	的場 昭大,大柴 小枝子,小川 洋,等. 半導体レーザ素子の製造方法. JP1994007640B2. 1994-01-26.

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