×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [9]
内容类型
会议论文 [9]
发表日期
2006 [2]
2003 [2]
2002 [2]
2001 [1]
2000 [1]
1998 [1]
更多...
学科主题
半导体物理 [4]
半导体材料 [3]
光电子学 [2]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共9条,第1-9条
帮助
限定条件
内容类型:会议论文
专题:半导体研究所
第一署名单位
第一作者单位
通讯作者单位
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Research on the band-gap of InN grown on siticon substrates
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Xiao, HL
;
Wang, XL
;
Wang, JX
;
Zhang, NH
;
Liu, HX
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:100/15
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
WURTZITE INN
NITRIDE
ABSORPTION
ALLOYS
FILMS
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z
会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.)
;
Xu, ZY (Xu, Z. Y.)
;
Yang, XD (Yang, X. D.)
;
Sun, BQ (Sun, B. Q.)
;
Ji, Y (Ji, Y.)
;
Zhang, SY (Zhang, S. Y.)
;
Ni, HQ (Ni, H. Q.)
;
Niu, ZC (Niu, Z. C.)
收藏
  |  
浏览/下载:182/36
  |  
提交时间:2010/03/29
GaInNAs/GaAs quantum wells
optical properties
nonradiative recombination effect
time-resolved photoluminescence
PL decay dynamics
PL thermal quenching
MOLECULAR-BEAM EPITAXY
GAASN ALLOYS
EXCITATION
Growth and photoluminescence of InAlGaN films
会议论文
5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003
作者:
Li DB
收藏
  |  
浏览/下载:13/2
  |  
提交时间:2010/10/29
MULTIPLE-QUANTUM WELLS
QUATERNARY ALLOYS
OPTICAL-PROPERTIES
Optical study of localized and delocalized states in GaAsN/GaAs
会议论文
symposium on gan and related alloys held at the mrs fall meeting, boston, ma, dec 01-05, 2003
作者:
Tan PH
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ALLOYS
GAAS1-XNX
PHOTOLUMINESCENCE
RELAXATION
Optical study of electronic states in GaAsN
会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Luo XD
;
Yang CL
;
Huang JS
;
Xu ZY
;
Liu J
;
Ge WK
;
Zhang Y
;
Mascarenhas A
;
Xin HP
;
Tu CW
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
TEMPERATURE PHOTOLUMINESCENCE
QUANTUM-WELL
ALLOYS
RELAXATION
GAAS1-XNX
Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells
会议论文
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Cheng BW
;
Zhang JG
;
Zuo YH
;
Mao RW
;
Huang CJ
;
Luo LP
;
Yao F
;
Wang QM
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
SI-GE ALLOYS
GROWTH
LAYERS
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/11/15
annealing
molecular beam epitaxy
germanium silicon alloys
semiconducting materials
STRAIN RELAXATION
Optical transitions in GaNAs/GaAs single quantum well
会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
Luo XD
;
Xu ZY
;
Sun BQ
;
Pan Z
;
Li LH
;
Lin YW
;
Ge WK
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/10/29
GaNAs
photoluminescence
band offset
band bowing coefficient
localized exciton
MOLECULAR-BEAM EPITAXY
ALLOYS
TEMPERATURE
GAASN
The SPER and characteristics of Si1-yCy alloys
会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Yu Z
;
Yu JZ
;
Cheng BW
;
Lei ZL
;
Li DZ
;
Wang QM
;
Liang JW
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/10/29
Si1-yCy alloys
ion implantation
solid phase epitaxy recrystallization
©版权所有 ©2017 CSpace - Powered by
CSpace