Optical study of localized and delocalized states in GaAsN/GaAs

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	Optical study of localized and delocalized states in GaAsN/GaAs
	Tan PH
	2003
会议名称	symposium on gan and related alloys held at the mrs fall meeting
会议日期	dec 01-05, 2003
会议地点	boston, ma
关键词	MOLECULAR-BEAM EPITAXY ALLOYS GAAS1-XNX PHOTOLUMINESCENCE RELAXATION
页码	695-700
通讯作者	xu zy chinese acad sci inst semicond beijing 100083 peoples r china.
中文摘要	taking advantages of short pulse excitation and time-resolved photoluminescence (pl), we have studied the exciton localization effect in a number of gaasn alloys and gaasn/gaas quantum wells (qws). in the pl spectra, an extra transition located at the higher energy side of the commonly reported n-related emissions is observed. by measuring pl dependence on temperature and excitation power along with pl dynamics study, the new pl peak has been identified as a transition of the band edge-related recombination in dilute gaasn alloy and delocalized transition in qws. using selective excitation pl we further attribute the localized emission in qws to the excitons localized at the gaasn/gaas interfaces. this interface-related exciton localization could be greatly reduced by a rapid thermal annealing.
英文摘要	taking advantages of short pulse excitation and time-resolved photoluminescence (pl), we have studied the exciton localization effect in a number of gaasn alloys and gaasn/gaas quantum wells (qws). in the pl spectra, an extra transition located at the higher energy side of the commonly reported n-related emissions is observed. by measuring pl dependence on temperature and excitation power along with pl dynamics study, the new pl peak has been identified as a transition of the band edge-related recombination in dilute gaasn alloy and delocalized transition in qws. using selective excitation pl we further attribute the localized emission in qws to the excitons localized at the gaasn/gaas interfaces. this interface-related exciton localization could be greatly reduced by a rapid thermal annealing.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:19z (gmt). no. of bitstreams: 1 2775.pdf: 195544 bytes, checksum: 56b9443fe388e17d0249301f00577a16 (md5) previous issue date: 2003; chinese acad sci, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	gan and related alloys - 2003, 798
会议录出版者	materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa
会议录出版地	506 keystone drive, warrendale, pa 15088-7563 usa
学科主题	半导体物理
语种	英语
ISSN号	0272-9172
ISBN号	1-55899-736-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13583]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Tan PH. Optical study of localized and delocalized states in GaAsN/GaAs[C]. 见:symposium on gan and related alloys held at the mrs fall meeting. boston, ma. dec 01-05, 2003.