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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文 physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850 Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J 收藏  |  浏览/下载：96/5  |  提交时间：2011/07/05 conductivity  doping  photoluminescence  pulsed laser deposition  ZnO  ZINC-OXIDE  ELECTRICAL-PROPERTIES  OPTICAL-PROPERTIES  OXYGEN-PRESSURE  PHOTOLUMINESCENCE  LUMINESCENCE  VIOLET  GROWTH  FABRICATION  DEPENDENCE   Growth behavior of AlInGaN films 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏  |  浏览/下载：216/66  |  提交时间：2010/03/08 Scanning electron microscope  Strain  X-ray diffraction  AlInGaN   Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale 期刊论文 journal of applied physics, 2008, 卷号: 103, 期号: 1, 页码: art. no. 014314 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：75/3  |  提交时间：2010/03/08 GAN-BASED LEDS  EFFICIENCY  FABRICATION  IMPROVEMENT  OVERGROWTH   Polarized raman scattering studies of nonpolar a-plane gan films grown on r-plane sapphire substrates by mocvd 期刊论文 Physica status solidi a-applications and materials science, 2006, 卷号: 203, 期号: 15, 页码: 3788-3792 作者:  Gao, Haiyong;  Yan, Fawang;  Li, Jinmin;  Wang, Junxi;  Yan, Jianchang 收藏  |  浏览/下载：15/0  |  提交时间：2019/05/12 Preparation and afm characterization of self-ordered porous alumina films on semi-insulated gaas substrate 期刊论文 Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340 作者:  Zhou, H. Y.;  Qu, S. C.;  Wang, Z. G.;  Liang, L. Y.;  Cheng, B. C. 收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12 Anodic alumina films  Semi-insulated gaas substrate  Anodization   Analysis of mode characteristics for deformed square resonators by fdtd technique 期刊论文 Ieee journal of quantum electronics, 2006, 卷号: 42, 期号: 1-2, 页码: 59-63 作者:  Chen, Q;  Huang, YZ;  Yu, LJ 收藏  |  浏览/下载：14/0  |  提交时间：2019/05/12 Finite-difference time-domain (fdtd) methods  Optical resonators  Modeling   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：40/0  |  提交时间：2010/04/11 anodic alumina films   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：132/26  |  提交时间：2010/03/29 anodic alumina films   Analysis of mode characteristics for deformed square resonators by FDTD technique 期刊论文 ieee journal of quantum electronics, 2006, 卷号: 42, 期号: 1-2, 页码: 59-63 作者:  Yu LJ 收藏  |  浏览/下载：530/11  |  提交时间：2010/04/11 finite-difference time-domain (FDTD) methods  optical resonators  modeling  MICROCAVITIES   Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells 期刊论文 journal of crystal growth, 1997, 卷号: 180, 期号: 1, 页码: 22-26 Wang XL; Sun DZ; Kong MY; Hou X; Zeng YP 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/17 quantum wells  GSMBE  InGaAs/InP  photoluminescence  MOLECULAR-BEAM EPITAXY  VAPOR-PHASE EPITAXY  ROOM-TEMPERATURE  MULTILAYERS  DEFECTS  DISLOCATIONS  MODULATION  LASERS  SHIFT