Growth behavior of AlInGaN films

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	Growth behavior of AlInGaN films
	Shang JZ ; Zhang BP ; Mao MH ; Cai LE ; Zhang JY ; Fang ZL ; Liu BL ; Yu JZ ; Wang QM ; Kusakabe K ; Ohkawa K
刊名	journal of crystal growth
	2009
卷号	311 期号:3 页码:474-477
关键词	Scanning electron microscope Strain X-ray diffraction AlInGaN
ISSN号	0022-0248
通讯作者	zhang bp xiamen univ dept phys xiamen 361005 peoples r china. e-mail address: bzhang@xmu.edu.cn
中文摘要	the structural and surface properties of alingan quaternary films grown at different temperatures on gan templates by metalorganic chemical vapor deposition are investigated. formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. the surface is featured with v-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of alingan layers. the two-layer structure is interpreted by taking into account of the strain status in alingan layers. (c) 2008 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7309]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shang JZ,Zhang BP,Mao MH,et al. Growth behavior of AlInGaN films[J]. journal of crystal growth,2009,311(3):474-477.
APA	Shang JZ.,Zhang BP.,Mao MH.,Cai LE.,Zhang JY.,...&Ohkawa K.(2009).Growth behavior of AlInGaN films.journal of crystal growth,311(3),474-477.
MLA	Shang JZ,et al."Growth behavior of AlInGaN films".journal of crystal growth 311.3(2009):474-477.